High current Minos IRFB3607 80V N Channel Power MOSFET with low gate charge and avalanche voltage stability
Key Attributes
Model Number:
IRFB3607
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
210pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.95nF@25V
Pd - Power Dissipation:
147W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
IRFB3607
Package:
TO-220
Product Description
Product Overview
The IRFB3607 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high-density cell design for lower RDS(ON), and fully characterized avalanche voltage and current for good stability and uniformity. The package is designed for effective heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 90 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 280 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 147 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 330 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 1.02 | /W | |||
| Thermal Resistance,Junction-to-Ambient | RJA | 62.5 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=35A (Note 3) | - | 9 | 10 | m |
| Forward Transconductance | gFS | VDS=20V,ID=35A | - | 90 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 3950 | - | pF |
| Output Capacitance | Coss | - | 280 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 210 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=35A, VGS=10V,RGEN=3 | - | 130 | - | nS |
| Turn-on Rise Time | tr | - | 200 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 350 | - | nS | |
| Turn-Off Fall Time | tf | - | 245 | - | nS | |
| Total Gate Charge | Qg | VDS=64V,ID=35A VGS=10V | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 24 | - | nC | |
| Gate-Drain Charge | Qg d | - | 28 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | - | - | 1.2 | V |
2410122012_Minos-IRFB3607_C19189960.pdf
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