N Channel Power LV MOSFET MCC MCMN2012A TP Featuring Trench Technology and Environmental Compliance
Key Attributes
Model Number:
MCMN2012A-TP
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
13.8W
Gate Charge(Qg):
-
Mfr. Part #:
MCMN2012A-TP
Package:
DFN-6JA(2x2)
Product Description
Product Overview
The MCMN2012A is a N-Channel Power LV MOSFET featuring Trench technology. It offers a wide operating junction temperature range from -55C to 150C and a storage temperature range from -55C to 150C. This device is designed with Moisture Sensitivity Level 1 and is Halogen Free, "Green" Device compliant, meeting UL94 V-0 flammability rating and RoHS compliance. It is suitable for applications requiring high efficiency and reliability.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Technology: Trench Power LV MOSFET
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free. "Green" Device, RoHS Compliant
- Flammability Rating: UL94 V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TC=25C | 7.5 | A | ||
| Continuous Drain Current | ID | TC=100C | 4.7 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 48 | A | ||
| Total Power Dissipation | PD | (Note 4) | 1.9 | W | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Maximum Thermal Resistance, Junction to Ambient | RJA | (Note 2) | 65 | C/W | ||
| Maximum Thermal Resistance, Junction to Case | RJC | 9 | C/W | |||
| Electrical Characteristics (Ta=25C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 20 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =10V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.35 | 1 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=5A | 9.5 | 13 | m | |
| Gate Resistance | RG | f=1MHz, Open drain | 2.5 | |||
| Continuous Body Diode Current | IS | 12 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=10A | 1.2 | V | ||
| Reverse Recovery Time | trr | IF=6A, dIF/dt=100A/s | 20 | ns | ||
| Reverse Recovery Charge | Qrr | 7 | nC | |||
| Input Capacitance | Ciss | VDS=4V,VGS=0V,f=1MHz | 863 | pF | ||
| Output Capacitance | Coss | VDS=4V,VGS=0V,f=1MHz | 208 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=4V,VGS=0V,f=1MHz | 183 | pF | ||
| Total Gate Charge | Qg | VDD=4V,VGS=4.5V, RG=1, ID=10A | 11.8 | nC | ||
| Gate-Source Charge | Qgs | VDD=4V,VGS=4.5V, RG=1, ID=10A | 1.3 | nC | ||
| Gate-Drain Charge | Qgd | VDD=4V,VGS=4.5V, RG=1, ID=10A | 2.2 | nC | ||
| Turn-On Delay Time | td(on) | VGS=2.5V, ID=5A | 12.5 | 18 | ns | |
| Turn-On Rise Time | tr | VGS=2.5V, ID=5A | 11 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=1.8V, ID=5A | 17 | 30 | ns | |
| Turn-Off Fall Time | tf | VGS=1.8V, ID=5A | 5 | ns | ||
Ordering Information:
| Part Number | Type | Tape & Reel | Reel Size |
|---|---|---|---|
| MCMN2012A | N-Channel MOSFET | 7" Reel | 3000 pcs |
2504101957_MCC-MCMN2012A-TP_C914335.pdf
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