High Voltage Silicon N Channel Power MOSFET Minos MD50N50 with Excellent Avalanche Energy Capability
Key Attributes
Model Number:
MD50N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-40℃~+175℃
RDS(on):
90mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
29.7pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
7.8579nF@25V
Pd - Power Dissipation:
250W
Gate Charge(Qg):
153nC@10V
Mfr. Part #:
MD50N50
Package:
TO-247
Product Description
Product Overview
The MD50N50 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances. This device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos ()
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Breakdown Voltage | 500 | V | |||
| ID | Drain Current (continuous) | at TC=25 | 50 | A | ||
| IDM | Drain Current (pulsed) | 160 | A | |||
| VGS | Gate to Source Voltage | +/-30 | V | |||
| Ptot | Total Dissipation | at TC=25 | 250 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| EAS | Single Pulse Avalanche Energy | 3200 | mJ | |||
| Electrical Parameters | ||||||
| VDS | Drain-source Voltage | VGS=0V, ID=250A | 500 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V, ID=15A | 0.09 | 0.12 | ||
| VGS(th) | Gated Threshold Voltage | VDS=VGS,ID=250A | 2.5 | 3.5 | 4.5 | V |
| IDSS | Drain to Source leakage Current | VDS=500V, VGS= 0V | 1.0 | A | ||
| IGSS(F) | Gated to Source Foward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gated to Source Reverse Leakage | VGS= -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS =0V, VDS=25V, f=1.0MHZ | 7857.9 | pF | ||
| Coss | Output Capacitance | 751.2 | pF | |||
| Crss | Reverse Transfer Capacitance | 29.7 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=250V,ID=30A, RG=25 | 68 | nS | ||
| tr | Turn-on Rise Time | 141 | nS | |||
| td(off) | Turn-off Delay Time | 213 | nS | |||
| tf | Turn-off Fall Time | 97.3 | nS | |||
| Qg | Total Gate Charge | VDS=400V ID=30A VGS=10V | 153 | nC | ||
| Qgs | Gate-Source Charge | 36.3 | nC | |||
| Qgd | Gate-Drain Charge | 57.9 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| ISD | S-D Current(Body Diode) | 40 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 160 | A | |||
| VSD | Diode Forward Voltage | VGS=0V, IDS=20A | 1.5 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=88A di/dt=100A/us | 482 | nS | ||
| Qrr | Reverse Recovery Charge | 8.5 | C | |||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 0.6 | /W | |||
Package Dimensions (TO-247)
| Symbol | Unit | Min | Typ | Max |
| A | mm | 4.8 | 5.00 | 5.20 |
| A1 | mm | 3.3 | 3.5 | 3.7 |
| A2 | mm | 2.20 | 2.40 | 2.60 |
| b | mm | 1.00 | 1.2 | 1.40 |
| b1 | mm | 2.90 | 3.10 | 3.30 |
| b2 | mm | 1.80 | 2.00 | 2.20 |
| c | mm | 0.50 | 0.60 | 0.70 |
| e | mm | 5.25 | 5.45 | 5.65 |
| E | mm | 15.2 | 15.7 | 16.2 |
| H | mm | 20.8 | 21 | 21.2 |
| H1 | mm | 19.5 | 20.0 | 20.5 |
| H2 | mm | 3.9 | 4.1 | 4.3 |
| G | mm | 5.9 | 6.1 | 6.3 |
| P | mm | 3.30 | 3.50 | 3.70 |
2411220412_Minos-MD50N50_C5452758.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
