MCC MCT04N10 TP N Channel MOSFET with Fast Switching and Lead Free Finish in Compact SOT 223 Package
Key Attributes
Model Number:
MCT04N10-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3.7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
115mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Input Capacitance(Ciss):
690pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
MCT04N10-TP
Package:
SOT-223-3
Product Description
Product Overview
The MCT04N10 is an N-Channel MOSFET designed for efficient power switching applications. It features ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. This MOSFET is housed in a SOT-223 package and meets UL 94 V-0 flammability rating. It is Moisture Sensitivity Level 1 and available in a Halogen Free option by adding the "-HF" suffix. The device is Lead Free Finish/RoHS Compliant, with the "P" suffix designating RoHS compliance.
Product Attributes
- Brand: MCC
- Model: MCT04N10
- Channel Type: N-Channel
- Package Type: SOT-223
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Available Upon Request (add "-HF" suffix)
- RoHS Compliant: Yes (indicated by "P" suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain-Source Voltage | VDS | 100 | V | |||
| Continuous Drain Current | ID | 3.7 | A | |||
| Pulsed Drain Current | IDM | 14.8 | A | |||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient | Rth(j-a) | 100 | C/W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =100V, VGS =0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 2 | 2.5 | V |
| On Characteristics | ||||||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=5A | 0.115 | 0.14 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f =1MHz | 690 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f =1MHz | 120 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f =1MHz | 90 | pF | ||
| Turn-On Delay Time | td(on) | VDD=30V, RG=2.5, ID=2A, VGS=10V | 11 | ns | ||
| Turn-On Rise Time | tr | VDD=30V, RG=2.5, ID=2A, VGS=10V | 7.4 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=30V, RG=2.5, ID=2A, VGS=10V | 35 | ns | ||
| Turn-Off Fall Time | tf | VDD=30V, RG=2.5, ID=2A, VGS=10V | 9.1 | ns | ||
| Total Gate Charge | Qg | VDD=30V, RG=2.5, ID=2A, VGS=10V | 15.5 | nC | ||
| Gate-Source Charge | Qgs | VDD=30V, RG=2.5, ID=2A, VGS=10V | 3.2 | nC | ||
| Gate-Drain Charge | Qgd | VDD=30V, RG=2.5, ID=2A, VGS=10V | 4.7 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Continuous Drain-Source Diode Forward Current | IS | 9.6 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 38.4 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=9A (Note 1) | 1.2 | V | ||
Note 1: Pulse Test : Pulse Width300s, Duty Cycle2%.
Note 2: Guaranteed by Design, Not Subject to Production Testing.
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCT04N10 | Tape&Reel: 2.5Kpcs/Reel | Part Number-TP |
Note: Add "-HF" Suffix for Halogen Free, e.g., Part Number-TP-HF.
2008121538_MCC-MCT04N10-TP_C721422.pdf
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