Power MOSFET Minos MPT65N08 Featuring Low On Resistance and Enhanced Avalanche Energy for Switching
Key Attributes
Model Number:
MPT65N08
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
118A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13.5pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
3.217nF@40V
Pd - Power Dissipation:
156.2W
Gate Charge(Qg):
64nC@40V
Mfr. Part #:
MPT65N08
Package:
TO-220
Product Description
Product Description
The MPT65N08 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for motor drivers and high-speed switching applications, offering low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) (m) @ VGS=10V, ID=118A | ID (A) @ TC=25C (Silicon Limited) | ID (A) @ TC=100C (Silicon Limited) | IDM (A) (Pulsed) | VGS (V) | EAS (mJ) | PD (W) @ TC=25C | RJC (/W) | RJA (/W) | VGS(th) (V) | Ciss (pF) | Coss (pF) | Crss (pF) | Qg (nC) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | IS (A) | VSD (V) @ IS=50A | trr (ns) | Qrr (C) |
| MPT65N08 | TO-220 | 85 | <6.5 (Typ: 5.4) | 118 | 75 | 320 | 20 | 100 | 156.2 | 0.55 | 62.5 | 2.0-4.0 | 3217 | 510 | 13.5 | 64 | 17 | 30 | 37 | 20 | 118 | <1.2 | 57 | 65 |
| MPT65N08S | TO-263 | 85 | <6.5 (Typ: 5.4) | 80 | N/A | 320 | 20 | 100 | N/A | N/A | 62.5 | 2.0-4.0 | 3217 | 510 | 13.5 | 64 | 17 | 30 | 37 | 20 | 118 | <1.2 | 57 | 65 |
2411220032_Minos-MPT65N08_C2980290.pdf
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