Power MOSFET Minos MPG30N10 Featuring High Density Cell Design and Low RDS ON for Switching Circuits
Key Attributes
Model Number:
MPG30N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
RDS(on):
30mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
2.55nF@25V
Pd - Power Dissipation:
70W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
MPG30N10
Package:
TO-252-2
Product Description
Product Overview
The MPG30N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: China (derived from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 100 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 70 | W | ||
| Single pulse avalanche energy | EAS | 96 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 3.5 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.2 | 2.3 | 3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=12A (Note 3) | - | 25 | 30 | m |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 2550 | - | pF |
| Output Capacitance | Coss | - | 225 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 205 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V, RGEN=10 (Note 4) | - | 29 | - | nS |
| Turn-on Rise Time | tr | - | 13 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 58.2 | - | nS | |
| Turn-Off Fall Time | tf | - | 13.4 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=20A, VGS=10V | - | 55 | - | nC |
| Gate-Source Charge | Qgs | - | 15 | - | nC | |
| Gate-Drain Charge | Qg | - | 20 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25IF=10A di/dt=100A/uS (note3) | - | 58 | - | nS |
| Reverse Recovery Charge | Qrr | - | 110 | - | nC | |
| Package Marking and Ordering Information | ||||||
| Package | Product Code | Packing | Ordering Codes | |||
| TO-252 | MDT30N10-D | Reel | MDT30N10D | |||
| TO-220 | MPG30N10-P | Tube | MPG30N10P | |||
2410122024_Minos-MPG30N10_C3036704.pdf
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