N channel MOSFET Megain MGV012N10N with 100V drain source voltage and excellent CdV dt effect decline
Key Attributes
Model Number:
MGV012N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
411A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 N-channel
Output Capacitance(Coss):
1.736nF
Pd - Power Dissipation:
600W
Input Capacitance(Ciss):
11.074nF
Gate Charge(Qg):
157nC@10V
Mfr. Part #:
MGV012N10N
Package:
TOLL
Product Description
Product Overview
The MGV012N10N is a high-performance N-channel MOSFET from MegaIn, designed for demanding applications. Featuring a 100V drain-source voltage and a low on-resistance of 1.2m (typ.), it offers excellent efficiency by minimizing conductive losses. Its advanced high cell density Trench technology contributes to super low gate charge and excellent CdV/dt effect decline, making it suitable for high-frequency switching applications. The low thermal resistance further enhances its reliability and performance in power-intensive scenarios.
Product Attributes
- Brand: MegaIn
- Model: MGV012N10N
- Package: TOLL
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VDS | Drain-Source Voltage | - | - | 100 | V | |
| VGS | Gate-Source Voltage | - | - | ±20 | V | |
| ID | Drain Current – Continuous (TC=25) | - | - | 411 | A | |
| ID | Drain Current – Continuous (TC=100) | - | - | 290 | A | |
| IDM | Pulsed Drain Current | - | - | 1645 | A | |
| EAS | Single Pulse Avalanche Energy | - | - | 2121 | mJ | |
| IAS | Avalanche Current | - | - | 206 | A | |
| PD | Total Power Dissipation (TC=25°C) | - | - | 600 | W | |
| PD | Total Power Dissipation (TC=100°C) | - | - | 300 | W | |
| TSTG | Storage Temperature Range | -55 | - | 175 | °C | |
| TJ | Operating Junction Temperature Range | -55 | - | 175 | °C | |
| RθJA | Thermal Resistance Junction to Ambient | - | - | 40 | °C/W | |
| RθJC | Thermal Resistance Junction to Case | - | - | 0.25 | °C/W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 100 | - | - | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, ID=50A | - | 1.2 | 1.6 | mΩ |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, ID=50A | - | 2.2 | 4.0 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.2 | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V, TJ=25°C | - | - | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V, TJ=100°C | - | - | 100 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=10A | - | 44 | - | S |
| Qg | Total Gate Charge | VDS=50V, VGS=10V, ID=50A | - | 157 | - | nC |
| Qgs | Gate-Source Charge | - | 70 | - | - | |
| Qgd | Gate-Drain Charge | - | 62 | - | - | |
| td(ON) | Turn-on Delay Time | VDD=50V, VGS=10V, RG=4.5Ω,RL=1Ω, ID=50A | - | 40 | - | nS |
| tr | Turn-on Rise Time | - | 122 | - | - | |
| td(OFF) | Turn-off Delay Time | - | 144 | - | - | |
| tf | Turn-off Fall Time | - | 127 | - | - | |
| Ciss | Input Capacitance | VDS=50V, VGS=0V, f=1MHz | - | 11074 | - | pF |
| Coss | Output Capacitance | - | 1736 | - | - | |
| Crss | Reverse Transfer Capacitance | - | 176 | - | - | |
| IS | Continuous Source Current | VG=VD=0V,Force Current | - | - | 411 | A |
| ISM | Pulsed Source Current | - | - | 823 | A | |
| VSD | Diode Forward Voltage | IS=50A,VGS=0V, TJ=25°C | - | - | 1.3 | V |
| trr | Reverse Recovery Time | IF=50A, dl/dt=100A/us, TJ=25°C | - | 120 | - | nS |
| Qrr | Reverse Recovery Charge | - | 347 | - | nC |
2504301615_Megain-MGV012N10N_C48678139.pdf
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