Fast Switching N Channel Power MOSFET MIRACLE POWER MPD05N50 with Low Crss and 1.5 Max On Resistance
Key Attributes
Model Number:
MPD05N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
584pF
Pd - Power Dissipation:
77W
Output Capacitance(Coss):
61pF
Gate Charge(Qg):
12.6nC@10V
Mfr. Part #:
MPD05N50
Package:
TO-252
Product Description
Product Overview
The MPD05N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 5A, and a low on-resistance of 1.5 (Max.) at VGS = 10V. This MOSFET offers low Crss, fast switching speeds, and is 100% avalanche tested, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPD05N50
- Technology: Miracle Technology
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 1.5 | ||||
| 500V, 5A | ||||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Application | ||||||
| Adaptor | ||||||
| Standby Power | ||||||
| Switching power supply | ||||||
| LED Power | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 500 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 5 | A | |||
| ID | Drain Current-Continuous, TC =100C | 3.1 | A | |||
| IDM | Drain Current-Pulsed | 20 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 77 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 180 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 1.62 | C/W | |||
| RJA | Junction-to-Ambient | 100 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 500 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 500V, VGS = 0V | 1 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 4 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 2.5A | 1.3 | 1.5 | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | 584 | pF | ||
| Coss | Output Capacitance | 61 | pF | |||
| Crss | Reverse Transfer Capacitance | 4 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250V, ID =5A, VGS=10V | 14 | ns | ||
| tr | Turn-On Rise Time | 18 | ns | |||
| td(off) | Turn-Off Delay Time | 32 | ns | |||
| tf | Turn-Off Fall Time | 11 | ns | |||
| Qg | Total Gate Charge | VDS = 400V, ID =5A, VGS = 10V | 12.6 | nC | ||
| Qgs | Gate-Source Charge | 3.1 | nC | |||
| Qgd | Gate-Drain Charge | 4.9 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 5 | A | ||
| ISM | Maximum Pulsed Current | VGS = 0V | 20 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 5A | 1.4 | V | ||
| Trr | Body Diode Reverse Recovery Time | di/dt=100A/us, IS=5A,VGS = 0V | 320 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | di/dt=100A/us, IS=5A,VGS = 0V | 1550 | nC | ||
2410122015_MIRACLE-POWER-MPD05N50_C17701965.pdf
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