Durable MCC SI01P10 TP P Channel MOSFET with Moisture Sensitivity Level 1 and Wide Temperature Range
Product Overview
The SI01P10 is a P-Channel MOSFET featuring Trench MV MOSFET Technology. It is designed for applications requiring high reliability and performance, with a moisture sensitivity level of 1 and a halogen-free, RoHS-compliant build. This device meets UL 94 V-0 flammability standards and operates within a wide temperature range from -55C to +150C. Its robust construction and advanced technology make it suitable for various industrial and electronic applications.
Product Attributes
- Technology: Trench MV MOSFET
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant
- Flammability Rating: Epoxy Meets UL 94 V-0
- Packaging: SOT-23
- Brand: MCC (Micro Commercial Components)
Technical Specifications
| Maximum Ratings | |||
|---|---|---|---|
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDS | -100 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (TA=25C) | ID | -1 | A |
| Continuous Drain Current (TA=100C) | ID | -0.77 | A |
| Pulsed Drain Current (Note3) | IDM | -4 | A |
| Total Power Dissipation (Note4) | PD | -1.5 | W |
| Operating Junction Temperature Range | -55 to +150 | C | |
| Storage Temperature | -55 to +150 | C | |
| Thermal Resistance Junction to Ambient (Note2) | RJA | 162 | C/W |
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | |||||
|---|---|---|---|---|---|
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -100 | V | |
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | A | |
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.5 | -3.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-1.0A | 560 | 800 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-0.5A | 620 | 1000 | m |
| Forward Tranconductance | gFS | VDS=-5V, ID=-1A | 5 | S | |
| Diode Characteristics | ||||
|---|---|---|---|---|
| Parameter | Symbol | Test Conditions | Typ | Unit |
| Continuous Body Diode Current | IS | -1 | A | |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A | -1.2 | V |
| Reverse Recovery Time | trr | IF=-1A, dIF/dt=100A/s | 28 | ns |
| Reverse Recovery Charge | Qrr | IF=-1A, dIF/dt=100A/s | 40 | nC |
| Dynamic Characteristics | ||||
|---|---|---|---|---|
| Parameter | Symbol | Test Conditions | Typ | Unit |
| Input Capacitance | Ciss | VDS=-40V,VGS=0V,f=1MHz | 342 | pF |
| Output Capacitance | Coss | 18.3 | pF | |
| Reverse Transfer Capacitance | Crss | 14.3 | pF | |
| Total Gate Charge | Qg | VDD=-10V, VGS=-10V, RGEN=2.5, ID= -1A | 6.1 | nC |
| Gate-Source Charge | Qgs | 2.7 | nC | |
| Gate-Drain Charge | Qgd | 12 | nC | |
| Turn-On Delay Time | td(on) | VDS=-10V,VGS=-10V,ID=-1A | 3.8 | ns |
| Turn-On Rise Time | tr | 7.8 | ns | |
| Turn-Off Delay Time | td(off) | 1.5 | ns | |
| Turn-Off Fall Time | tf | 0.98 | ns | |
Dimensions
| SOT-23 Package Dimensions | |||
|---|---|---|---|
| DIM | INCHES | MM | NOTE |
| A | 0.110 0.120 | 2.80 3.04 | |
| B | 0.083 0.104 | 2.10 2.64 | |
| C | 0.047 0.055 | 1.20 1.40 | |
| D | 0.034 0.041 | 0.85 1.05 | |
| E | 0.067 0.083 | 1.70 2.10 | |
| F | 0.018 0.024 | 0.45 0.60 | |
| G | 0.0004 0.006 | 0.01 0.15 | |
| H | 0.035 0.043 | 0.90 1.10 | |
| J | 0.003 0.007 | 0.08 0.18 | |
| K | 0.012 0.020 | 0.30 0.51 | |
| L | 0.020 | 0.50 | 0.007 0.20 |
Ordering Information
Device: SI01P10
Packing: Tape&Reel:3Kpcs/Reel
Part Number: SI01P10-TP
2411220111_MCC-SI01P10-TP_C5917586.pdf
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