Durable MCC SI01P10 TP P Channel MOSFET with Moisture Sensitivity Level 1 and Wide Temperature Range

Key Attributes
Model Number: SI01P10-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
630mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V,1A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
14.3pF@40V
Number:
1 P-Channel
Input Capacitance(Ciss):
342pF@40V
Pd - Power Dissipation:
770mW
Gate Charge(Qg):
7.8nC@10V
Mfr. Part #:
SI01P10-TP
Package:
SOT-23
Product Description

Product Overview

The SI01P10 is a P-Channel MOSFET featuring Trench MV MOSFET Technology. It is designed for applications requiring high reliability and performance, with a moisture sensitivity level of 1 and a halogen-free, RoHS-compliant build. This device meets UL 94 V-0 flammability standards and operates within a wide temperature range from -55C to +150C. Its robust construction and advanced technology make it suitable for various industrial and electronic applications.

Product Attributes

  • Technology: Trench MV MOSFET
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Packaging: SOT-23
  • Brand: MCC (Micro Commercial Components)

Technical Specifications

Maximum Ratings
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (TA=25C) ID -1 A
Continuous Drain Current (TA=100C) ID -0.77 A
Pulsed Drain Current (Note3) IDM -4 A
Total Power Dissipation (Note4) PD -1.5 W
Operating Junction Temperature Range -55 to +150 C
Storage Temperature -55 to +150 C
Thermal Resistance Junction to Ambient (Note2) RJA 162 C/W
Electrical Characteristics @ 25C (Unless Otherwise Specified)
Parameter Symbol Test Conditions Min Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1.5 -3.0 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-1.0A 560 800 m
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-0.5A 620 1000 m
Forward Tranconductance gFS VDS=-5V, ID=-1A 5 S
Diode Characteristics
Parameter Symbol Test Conditions Typ Unit
Continuous Body Diode Current IS -1 A
Diode Forward Voltage VSD VGS=0V, IS=-1A -1.2 V
Reverse Recovery Time trr IF=-1A, dIF/dt=100A/s 28 ns
Reverse Recovery Charge Qrr IF=-1A, dIF/dt=100A/s 40 nC
Dynamic Characteristics
Parameter Symbol Test Conditions Typ Unit
Input Capacitance Ciss VDS=-40V,VGS=0V,f=1MHz 342 pF
Output Capacitance Coss 18.3 pF
Reverse Transfer Capacitance Crss 14.3 pF
Total Gate Charge Qg VDD=-10V, VGS=-10V, RGEN=2.5, ID= -1A 6.1 nC
Gate-Source Charge Qgs 2.7 nC
Gate-Drain Charge Qgd 12 nC
Turn-On Delay Time td(on) VDS=-10V,VGS=-10V,ID=-1A 3.8 ns
Turn-On Rise Time tr 7.8 ns
Turn-Off Delay Time td(off) 1.5 ns
Turn-Off Fall Time tf 0.98 ns

Dimensions

SOT-23 Package Dimensions
DIM INCHES MM NOTE
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.020 0.50 0.007 0.20

Ordering Information

Device: SI01P10

Packing: Tape&Reel:3Kpcs/Reel

Part Number: SI01P10-TP


2411220111_MCC-SI01P10-TP_C5917586.pdf

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