Microdiode Semiconductor MDD4438 60V N Channel Enhancement Mode MOSFET with Soft Recovery and Low RDS
Key Attributes
Model Number:
MDD4438
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8.2A
RDS(on):
16mΩ@10V;18mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
MDD4438
Package:
SOP-8
Product Description
Product Overview
The MDD4438 is a 60V N-Channel Enhancement Mode MOSFET designed for low RDS(ON) and extremely low switching loss. It offers fast switching and soft recovery, making it ideal for synchronous rectification power systems with low driving voltage. Key applications include battery protection, power management, and switched-mode power supplies.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Product Name: MDD4438
- Device Type: N-Channel Enhancement Mode MOSFET
- Package: SOP-8
- Origin: Craftsman-Made Consciention Chip
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Note 1 | 8.2 | A | ||
| Pulsed Drain Current | IDM | Note 2 | 40 | A | ||
| Power Dissipation | PD | 3.1 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -55 | 150 | °C | ||
| Thermal Resistance, steady-state | RθJA | 75 | °C/W | |||
| Thermal Resistance, t10s | RθJA | 40 | °C/W | |||
| Electrical Characteristics (TA=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | (BR)DSS | VGS=0V, ID=250μA | 60 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=±20V | ±100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=60V, VGS=0V | 1.0 | μA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 1.5 | 2.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=7.6A | 1.0 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=8.2A | 0.8 | mΩ | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VGS=10V, VDD=30V, ID=2A, RG=3 | 10 | ns | ||
| Turn on Rise Time | tr | VGS=10V, VDD=30V, ID=2A, RG=3 | 21 | ns | ||
| Turn Off Fall Time | tf | VGS=10V, VDD=30V, ID=2A, RG=3 | 35 | ns | ||
| Turn Off Delay Time | td(off) | VGS=10V, VDD=30V, ID=2A, RG=3 | 18 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=8.2A, VGS=0V | 1.5 | V | ||
| Body Diode Reverse Recovery Time | trr | IF=20A, di/dt=500A/μs | 22 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, di/dt=500A/μs | 12 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V, f=1MHz | 2000 | pF | ||
| Output Capacitance | Coss | VDS=30V, f=1MHz | 116 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V, f=1MHz | 20 | pF | ||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=10A | 28 | nC | ||
| Gate Source Charge | Qgs | VGS=10V, VDS=30V, ID=10A | 16 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=30V, ID=10A | 18 | nC | ||
2507221720_MDD-Microdiode-Semiconductor-MDD4438_C49383114.pdf
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