High saturation current N Channel MOSFET MDD Microdiode Semiconductor MDD2002KDW with ESD protection
Key Attributes
Model Number:
MDD2002KDW
Product Custom Attributes
Mfr. Part #:
MDD2002KDW
Package:
SOT-363
Product Description
Product Overview
The MDD2002KDW is an N-Channel Enhancement Mode MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(ON), making it suitable for voltage-controlled small signal switching applications. This rugged and reliable MOSFET offers high saturation current capability and ESD protection (2kV). It is ideal for load switches in portable devices and DC/DC converters.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-363
- Material: Plastic-Encapsulate
- Certifications: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | -- | -- | 20 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V (TA=25) | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V, VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 0.3 | 0.65 | 1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=0.5A | -- | 250 | 380 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=0.4A | -- | 350 | 450 | m |
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | -- | 79 | -- | pF |
| Output Capacitance | Coss | VDS=10V, VGS=0V, f=1MHz | -- | -- | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V, f=1MHz | -- | -- | -- | pF |
| Total Gate Charge | Qg | VDS=10V, ID=0.3A, VGS=4.5V | -- | 5 | -- | nC |
| Gate-Source Charge | Qgs | VDS=10V, ID=0.3A, VGS=4.5V | -- | 0.8 | -- | nC |
| Gate-Drain (Miller) Charge | Qgd | VDS=10V, ID=0.3A, VGS=4.5V | -- | 1.2 | -- | nC |
| Turn on Delay Time | td(on) | VDS=10V, ID=0.5A, VGS=4.5V, RGEN=3 | -- | 1.9 | -- | ns |
| Turn-on Rise Time | tr | VDS=10V, ID=0.5A, VGS=4.5V, RGEN=3 | -- | 4.8 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=10V, ID=0.5A, VGS=4.5V, RGEN=3 | -- | 6.7 | -- | ns |
| Turn-off Fall Time | tf | VDS=10V, ID=0.5A, VGS=4.5V, RGEN=3 | -- | 7.4 | -- | ns |
| Drain-Source Voltage | VDS | -- | -- | 20 | V | |
| Continuous Drain Current | ID | -- | -- | 0.75 | A | |
| Power Dissipation | PD | -- | -- | 200 | mW | |
| Thermal Resistance Junction to Ambient | RJA | -- | 833 | -- | /W | |
| Junction Temperature | TJ | -- | -- | 150 | ||
| Storage Temperature | Tstg | -55 | -- | +150 | ||
| Gate-Source Voltage | VGS | -10 | -- | +10 | V |
2512021845_MDD-Microdiode-Semiconductor-MDD2002KDW_C53069225.pdf
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