P Channel Enhancement Mode MOSFET MDD3407A MDD Microdiode Semiconductor with Lead Free SOT23 Package
Key Attributes
Model Number:
MDD3407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
38mΩ@10V;50mΩ@4.5V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Input Capacitance(Ciss):
540pF
Pd - Power Dissipation:
1.3W
Output Capacitance(Coss):
70pF
Gate Charge(Qg):
10nC
Mfr. Part #:
MDD3407A
Package:
SOT-23-3L
Product Description
Product Overview
The MDD3407A is a -30V P-Channel Enhancement Mode MOSFET designed for load switch and switching circuit applications. It features advanced trench technology, offering excellent Rds(on) and low gate charge performance, making it suitable for high-speed line drivers and power management functions. This device is lead-free and comes in a SOT-23-3 package.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Type: P-Channel Enhancement Mode MOSFET
- Package: SOT-23-3
- Certifications: Lead Free
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | -30 | V | |||
| VGS | 20 | V | ||||
| ID | (TA=25 unless otherwise noted) | -4.1 | A | |||
| PD | (Note 2, TA=25) | 1.3 | W | |||
| Thermal Resistance | RJA | (Note 2, TA=25) | 90 | /W | ||
| Junction and Storage Temperature | TJ,Tstg | -50 | 150 | |||
| Pulsed Drain Current | IDM | (Note 1) | -16.4 | A | ||
| Electrical Characteristics | V(BR)DSS | VGS=0V, ID=-250A | -30 | V | ||
| IDSS | VDS=-30V, VGS=0V | -1 | uA | |||
| IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| VGS(TH) | VDS=VGS, ID=-250A | -1.2 | -2.5 | V | ||
| On-State Resistance | RDS(ON) | VGS=-10V, ID=-4A (Note 3) | 55 | m | ||
| VGS=-4.5V, ID=-3A (Note 3) | 75 | m | ||||
| Dynamic Electrical Characteristics | Ciss | VDS=-15V, VGS=0V, f=1MHz | 540 | pF | ||
| Coss | VDS=-15V, VGS=0V, f=1MHz | 70 | pF | |||
| Crss | VDS=-15V, VGS=0V, f=1MHz | 55 | pF | |||
| Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-2A | 10 | nC | ||
| Qgs | VDS=-15V, VGS=-10V, ID=-2A | 2.1 | nC | |||
| Qgd | VDS=-15V, VGS=-10V, ID=-2A | 2.7 | nC | |||
| Switching Characteristics | td(on) | VDS=-15V, VGS=-10V, ID=-2A, RG=3 | 3 | ns | ||
| tr | VDS=-15V, VGS=-10V, ID=-2A, RG=3 | 2.8 | ns | |||
| td(off) | VDS=-15V, VGS=-10V, ID=-2A, RG=3 | 25 | ns | |||
| tf | VDS=-15V, VGS=-10V, ID=-2A, RG=3 | 13 | ns | |||
| Source Drain Diode Characteristics | IS | Maximum Continuous Drain to Source Diode Forward Current | -4.1 | A | ||
| VSD | IS=-1A, VGS=0V | -0.8 | -1.2 | V |
2507221720_MDD-Microdiode-Semiconductor-MDD3407A_C49383127.pdf
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