Trench LV Technology N Channel MOSFET MCC SI2318A TP Halogen Free RoHS Compliant For Power Switching

Name: Trench LV Technology N Channel MOSFET MCC SI2318A TP Halogen Free RoHS Compliant For Power Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SI2318A-TP
Availability: InStock

Key Attributes

Model Number: SI2318A-TP

Product Custom Attributes

Configuration:

Drain To Source Voltage:

40V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃@(Tj)

RDS(on):

45mΩ

Gate Threshold Voltage (Vgs(th)):

1.8V

Reverse Transfer Capacitance (Crss@Vds):

Number:

1 N-channel

Input Capacitance(Ciss):

Pd - Power Dissipation:

1.2W

Gate Charge(Qg):

Mfr. Part #:

SI2318A-TP

Package:

SOT-23

Product Description

Product Overview

The SI2318A is an N-Channel MOSFET featuring Trench LV MOSFET technology. Designed for reliability, it offers a wide operating and storage temperature range from -55C to +150C. This device is Halogen Free and RoHS Compliant, making it a 'Green' device. It is suitable for various applications requiring efficient power switching.

Product Attributes

Brand: MCCSEMI.COM
Technology: Trench LV MOSFET
Moisture Sensitivity Level: 1
Environmental: Halogen Free. Green Device
Flammability Rating: Epoxy Meets UL 94 V-0
Compliance: Lead Free Finish/RoHS Compliant
Suffix: "P" Suffix Designates RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=250A			40	V
Gate-Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	0.8	1.4	1.8	V
Gate-Body Leakage Current	IGSS	VGS =20V, VDS =0V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS =40V, VGS =0V		1	A
Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=5A	25		45	m
		VGS=4.5V, ID=3A	37		60	m
Input Capacitance	Ciss	VDS=20V,VGS=10V,ID=5A, RGEN=2.2		390		pF
Output Capacitance	Coss	VDS=20V,Vgs=10V,ID=5A		50		pF
Reverse Transfer Capacitance	Crss	f=1MHz		38		pF
Turn-On Delay Time	td(on)			6		ns
Turn-On Rise Time	tr			20		ns
Turn-Off Delay Time	td(off)			12		ns
Turn-Off Fall Time	tf			2		ns
Total Gate Charge	Qg			11		nC
Gate-Source Charge	Qgs			3		nC
Gate-Drain Charge	Qgd			3		nC
Forward Transconductance	gFS	VDS=5V, ID=2.5A		9		S
Continuous Body Diode Current	IS			1.2		A
Diode Forward Voltage	VSD	VGS =0V, IS =1.2A		1.0	1.4	V
Reverse Recovery Time	trr			26		ns
Reverse Recovery Charge	Qrr			19		nC
Operating Junction Temperature Range			-55		+150	C
Storage Temperature Range			-55		+150	C
Thermal Resistance Junction to Ambient	RJA	Note 2		104		C/W

Dimensions (SOT-23)

DIM	INCHES	MM
MIN	MAX	MIN	MAX
A	0.110	0.120	2.80	3.04
B	0.083	0.104	2.10	2.64
C	0.047	0.055	1.20	1.40
D	0.034	0.041	0.85	1.05
E	0.067	0.083	1.70	2.10
F	0.018	0.024	0.45	0.60
G	0.0004	0.006	0.01	0.15
H	0.035	0.043	0.90	1.10
J	0.003	0.007	0.08	0.18
K	0.012	0.020	0.30	0.51
L	0.020	0.079	0.50	2.00

Suggested Solder Pad Layout

Dimensions are in inches [mm]

0.031 [0.800]
0.035 [0.900]
0.037 [0.950]
0.037 [0.950]

Internal Structure and Marking Code

SI2318A

2504101957_MCC-SI2318A-TP_C914367.pdf

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