500V N Channel Enhancement Mode MOSFET MDD Microdiode Semiconductor MDD13N50F for power applications
Key Attributes
Model Number:
MDD13N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
RDS(on):
350mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Pd - Power Dissipation:
50W
Output Capacitance(Coss):
190pF
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
37nC
Mfr. Part #:
MDD13N50F
Package:
TO-220F
Product Description
Product Overview
The MDD13N50F is a 500V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for use in electronic ballasts, switched-mode power supplies, and UPS systems.
Product Attributes
- Product Name: MDD13N50F
- Package Type: TO-220F-3L
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 500 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | Tc=25 | 13 | A | ||
| RDS(on) | RDS(on),max | VGS=10V | 0.52 | Ω | ||
| Total Gate Charge | Qg | VDS=400V, VGS=10V, ID=13A | 37 | nC | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 500 | V | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250µA | 2.0 | 4.0 | V | |
| Thermal resistance, Junction-to-case | RθJC | TO-220F | 2.58 | °C/W | ||
| Thermal resistance, Junction-to-ambient | RθJA | TO-220F | 62.5 | °C/W | ||
| Turn on Delay Time | td(on) | VDS=250V, ID=13A, RG=25Ω | 90 | ns | ||
| Turn on Rise Time | tr | 160 | ns | |||
| Turn Off Delay Time | td(off) | 150 | ns | |||
| Turn Off Fall Time | tf | 60 | ns | |||
| Source drain current(Body Diode) | ISD | 13 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=13A, VGS=0V | 1.4 | V |
2506181720_MDD-Microdiode-Semiconductor-MDD13N50F_C49230726.pdf
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