600V 20A N Channel Power MOSFET MIRACLE POWER MPF20N60 Featuring Fast Switching and Avalanche Tested
Key Attributes
Model Number:
MPF20N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
450mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
86W
Gate Charge(Qg):
53.5nC@10V
Mfr. Part #:
MPF20N60
Package:
TO-220F
Product Description
Product Overview
The MPF20N60 is a 600V, 20A N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features low Crss, fast switching characteristics, and is 100% avalanche tested. This MOSFET is ideal for use in adaptors, standby power supplies, and switching power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Technology: Miracle Technology
- Channel Type: N-Channel
- Package Type: TO-220F
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 600 | V | |||
| Gate-Source Voltage (VGS) | ±30 | V | |||
| Drain Current-Continuous (ID) @ TC = 25°C | 20 | A | |||
| Drain Current-Continuous (ID) @ TC = 100°C | 12.5 | A | |||
| Drain Current-Pulsed (IDM) | b | 80 | A | ||
| Maximum Power Dissipation (PD) @ TJ = 25°C | 86 | W | |||
| Single Pulsed Avalanche Energy (EAS) | d | 980 | mJ | ||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | °C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (RθJC) | Max. | 1.45 | °C/W | ||
| Thermal Resistance Junction-Ambient (RθJA) | Max. | 62.5 | °C/W | ||
| Electrical Characteristics @ TJ = 25°C unless otherwise noted | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250µA | 600 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 600V, VGS = 0V | - | - | 1 | µA |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250µA | 2 | - | 4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | c VGS = 10V, ID = 10A | - | 0.35 | 0.45 | Ω |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2800 | - | pF |
| Output Capacitance (Coss) | - | 260 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 25 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 300V, ID = 20A, VGS=10V | - | 36 | - | ns |
| Turn-On Rise Time (tr) | - | 73 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 166 | - | ns | |
| Turn-Off Fall Time (tf) | - | 73 | - | ns | |
| Total Gate Charge (Qg) | VDS = 300V, ID = 20A, VGS = 10V | - | 53.5 | - | nC |
| Gate-Source Charge (Qgs) | - | 13.5 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 19.3 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 20 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 80 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 20A | - | 1.4 | - | V |
| Body Diode Reverse Recovery Time (Trr) | IS=20A,VGS=0V, di/dt=100A/µs | - | 530 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 6.1 | - | µC | |
2410122015_MIRACLE-POWER-MPF20N60_C17701971.pdf
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