power handling MCC MCAC60N08Y-TP N Channel MOSFET with Split Gate Trench technology and UL 94 V0 rating
Key Attributes
Model Number:
MCAC60N08Y-TP
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@6V,10A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
29pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
1.84nF@40V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
-
Mfr. Part #:
MCAC60N08Y-TP
Package:
DFN-8(5.7x5.1)
Product Description
Product Overview
The MCAC60N08Y is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, offering low thermal resistance and a halogen-free design. It meets UL 94 V-0 flammability rating and is Lead Free Finish/RoHS Compliant. This MOSFET is suitable for applications requiring efficient power handling and thermal management.
Product Attributes
- Brand: MCC
- Technology: Split Gate Trench MOSFET
- Flammability Rating: UL 94 V-0
- Compliance: Halogen Free, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Continuous Drain Current | ID | 60 | A | |||
| Pulsed Drain Current | IDM | (2) | 216 | A | ||
| Total Power Dissipation | PD | 35 | W | |||
| Single Pulsed Avalanche Energy | EAS | (3) TJ=25C, L=0.1mH, VDD=50V | 45 | mJ | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Case | (1) | 3.5 | C/W | |||
| Static Characteristics Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 80 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=64V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 6.5 | 7.8 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=6V, ID=10A | 8.5 | 11 | m | |
| Continuous Body Diode Current | IS | 60 | A | |||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 1.3 | V | ||
| Diode Characteristics | ||||||
| Reverse Recovery Time | trr | IS=20A,di/dt=100A/s | 47 | ns | ||
| Reverse Recovery Charge | Qrr | 46 | nC | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V,VGS=0V,f=1MHz | 1840 | pF | ||
| Output Capacitance | Coss | 337 | pF | |||
| Reverse Transfer Capacitance | Crss | 29 | pF | |||
| Total Gate Charge | Qg | VDS=40V, VGEN=10V, RG=4.5, RL=2, IDS=20A | 38 | nC | ||
| Gate-Source Charge | Qgs | 9.1 | nC | |||
| Gate-Drain Charge | Qg d | 10 | nC | |||
| Turn-On Delay Time | td(on) | 10 | ns | |||
| Turn-On Rise Time | tr | 28 | ns | |||
| Turn-Off Delay Time | td(off) | 30 | ns | |||
| Turn-Off Fall Time | tf | 23 | ns | |||
Dimensions
| DIM | INCHES | MM | NOTE |
|---|---|---|---|
| A | 0.031 - 0.047 | 0.80 - 1.20 | |
| B | 0.193 - 0.222 | 4.90 - 5.64 | |
| C | 0.232 - 0.250 | 5.90 - 6.35 | |
| D | 0.148 - 0.167 | 3.75 - 4.25 | |
| E | 0.126 - 0.154 | 3.20 - 3.92 | |
| F | 0.189 - 0.213 | 4.80 - 5.40 | |
| G | 0.222 - 0.239 | 5.65 - 6.06 | |
| H | 0.045 - 0.059 | 1.15 - 1.50 | |
| K | 0.012 - 0.020 | 0.30 - 0.50 | |
| J | 0.046 - 0.054 | 1.17 - 1.37 | |
| L | 0.012 - 0.028 | 0.30 - 0.71 | |
| M | 0.016 - 0.028 | 0.40 - 0.71 | |
| N | 0.010 TYP. | 0.254 TYP. |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCAC60N08Y | Tape&Reel: 5Kpcs/Reel | MCAC60N08Y-TP |
2008182105_MCC-MCAC60N08Y-TP_C725264.pdf
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