power MOSFET Megain MGC031N06L featuring advanced trench technology for LED lighting and quick chargers
Key Attributes
Model Number:
MGC031N06L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.1mΩ@10V;4.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Output Capacitance(Coss):
1.522nF
Input Capacitance(Ciss):
3.458nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
MGC031N06L
Package:
PDFN5x6-8
Product Description
Product Overview
The MGC031N06L is an N-channel MOSFET designed for high-performance applications. It features super low gate charge, 100% EAS guaranteed, excellent CdV/dt effect decline, and advanced high cell density Trench technology. This MOSFET is ideal for motor drives, power tools, LED lighting, and quick chargers.
Product Attributes
- Brand: Mega
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions |
| VDS | 60 | V | |
| ID (Continuous, TC=25) | 85 | A | |
| ID (Continuous, TC=100) | 66 | A | |
| IDM (Pulsed Drain Current) | 240 | A | |
| EAS (Single Pulse Avalanche Energy) | 101 | mJ | |
| IAS (Avalanche Current) | 45 | A | |
| PD (Total Power Dissipation, TC=25C) | 83 | W | |
| TSTG (Storage Temperature Range) | -55 to 150 | ||
| TJ (Operating Junction Temperature Range) | -55 to 150 | ||
| RJA (Thermal Resistance Junction-Ambient) | 55 | /W | |
| RJC (Thermal Resistance Junction-Case) | 1.5 | /W | |
| BVDSS (Drain-Source Breakdown Voltage) | 60 | V | VGS=0V, ID=250uA |
| RDS(ON) (VGS=10V) | 3.1 (Typ), <3.6 (Max) | m | ID=20A |
| RDS(ON) (VGS=4.5V) | 4.4 (Typ), <5.4 (Max) | m | ID=15A |
| VGS(th) (Gate Threshold Voltage) | 1.2 (Min), 2.3 (Max) | V | VGS=VDS, ID=250uA |
| IDSS (Drain-Source Leakage Current) | 1 | uA | VDS=48V, VGS=0V, TJ=25 |
| IDSS (Drain-Source Leakage Current) | 5 | uA | VDS=48V, VGS=0V, TJ=55 |
| IGSS (Gate-Source Leakage Current) | 100 | nA | VGS=20V, VDS=0V |
| gfs (Forward Transconductance) | 65 | S | VDS=5V, ID=20A |
| Rg (Gate Resistance) | 0.7 | VDS=0V , VGS=0V, f=1MHz | |
| Qg (Total Gate Charge) | 58 | nC | VDS=30V, VGS=10V, ID=20A |
| Qgs (Gate-Source Charge) | 16 | nC | |
| Qgd (Gate-Drain Charge) | 4 | nC | |
| Td(ON) (Turn-on Delay Time) | 18 | ns | VDD=30V, VGS=10V, RG=3,ID=20A |
| Tr (Turn-on Rise Time) | 8 | ns | |
| Td(OFF) (Turn-off Delay Time) | 50 | ns | |
| Tf (Turn-off Fall Time) | 10.5 | ns | |
| Ciss (Input Capacitance) | 3458 | pF | VDS=30V, VGS=0V, f=1MHz |
| Coss (Output Capacitance) | 1522 | pF | |
| Crss (Reverse Transfer Capacitance) | 22 | pF | |
| IS (Continuous Source Current) | 45 | A | VG=VD=0V,Force Current |
| VSD (Diode Forward Voltage) | 1.1 | V | IS=1A, VGS=0V |
| trr (Reverse Recovery Time) | 24 | nS | IF=20A,dl/dt=100A/us |
| Qrr (Reverse Recovery Charge) | 85 | nC |
2506251635_Megain-MGC031N06L_C49242752.pdf
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