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quality MCC MCG16N15 TP MOSFET Offering Performance Across Wide Temperature Range and Low Thermal Resistance factory
quality MCC MCG16N15 TP MOSFET Offering Performance Across Wide Temperature Range and Low Thermal Resistance factory

MCC MCG16N15 TP MOSFET Offering Performance Across Wide Temperature Range and Low Thermal Resistance

Key Attributes
Model Number: MCG16N15-TP
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
47mΩ@6V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
30pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.231nF@75V
Pd - Power Dissipation:
41W
Gate Charge(Qg):
-
Mfr. Part #:
MCG16N15-TP
Package:
PDFN-8(3.3x3.3)
Product Description

Product Overview

The MCG16N15 is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for efficient power management. It offers low thermal resistance and is built with Halogen Free, "Green" Device compliant materials, meeting UL 94 V-0 flammability rating. This MOSFET is Lead Free and RoHS Compliant, suitable for applications requiring reliable performance across a wide operating temperature range of -55C to +150C. Its robust design includes a high continuous drain current rating and a low thermal resistance of 3C/W Junction to Case.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Split Gate Trench MOSFET
  • Environmental Compliance: Halogen Free, "Green" Device (Note 1), Lead Free Finish/RoHS Compliant
  • Flammability Rating: Epoxy Meets UL 94 V-0

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 16 A
Pulsed Drain Current IDM (3) 41 A
Total Power Dissipation PD W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance Junction to Case (2) 3 °C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 150 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=120V, VGS=0V 1 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 2 4 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 41 52 mΩ
Drain-Source On-Resistance RDS(on) VGS=6V, ID=5A 47 59 mΩ
Continuous Body Diode Current IS 16 A
Diode Forward Voltage VSD VGS=0V, IS=10A 1.3 V
Reverse Recovery Time trr IS=7A,di/dt=100A/µs 64 ns
Reverse Recovery Charge Qrr VDS=75V,VGS=10V,ID=10A 192 nC
Input Capacitance Ciss VDS=75V, VGS=0V, f=1MHz 1231 pF
Output Capacitance Coss VDS=75V, VGS=0V, f=1MHz 80 pF
Reverse Transfer Capacitance Crss VDS=75V, VGS=0V, f=1MHz 30 pF
Total Gate Charge Qg VDS=75V, VGEN=10V, RG=4.5Ω, RL=7.5Ω, IDS=10A 25.8 nC
Gate-Source Charge Qgs VDS=75V, VGEN=10V, RG=4.5Ω, RL=7.5Ω, IDS=10A 7.7 nC
Gate-Drain Charge Qg VDS=75V, VGEN=10V, RG=4.5Ω, RL=7.5Ω, IDS=10A 7.9 nC
Turn-On Delay Time td(on) VDS=75V, VGS=10V, ID=10A 7.8 ns
Turn-On Rise Time tr VDS=75V, VGS=10V, ID=10A 19.7 ns
Turn-Off Delay Time td(off) VDS=75V, VGS=10V, ID=10A 17.3 ns
Turn-Off Fall Time tf VDS=75V, VGS=10V, ID=10A 18.5 ns

Note 1: Halogen free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Note 2: Surface Mounted on 1 in² Pad Area, t≤10 sec.

Note 3: Pulse Test: Pulse Width≤300µs, Duty Cycle ≤2%.

Ordering Information:

Device Packing Part Number
MCG16N15 Tape&Reel: 5Kpcs/Reel MCG16N15-TP

2410010205_MCC-MCG16N15-TP_C712280.pdf

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