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quality Low On Resistance MOSFET MIRACLE POWER MSE002C with 150 Volt Drain Source Voltage and RoHS Compliance factory
quality Low On Resistance MOSFET MIRACLE POWER MSE002C with 150 Volt Drain Source Voltage and RoHS Compliance factory

Low On Resistance MOSFET MIRACLE POWER MSE002C with 150 Volt Drain Source Voltage and RoHS Compliance

Key Attributes
Model Number: MSE002C
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
130A
RDS(on):
6.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
550pF
Pd - Power Dissipation:
240W
Input Capacitance(Ciss):
5.8nF
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
MSE002C
Package:
TO-220
Product Description

Product Overview

The MSE002C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 150V drain-source voltage and a continuous drain current of 130A at 25C, with an exceptionally low on-resistance (RDS(on)) of 5.2m typ. at 10V gate-source voltage. This MOSFET offers excellent RDS(on) and low gate charge, making it ideal for demanding tasks such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC subsystems, and power management in telecom and industrial automation. It is also Halogen-free and RoHS compliant, with 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen free; RoHS compliant
  • Testing: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 130 A
ID Drain Current-Continuous (TC = 100C) 84 A
IDM Drain Current-Pulsed 190 A
PD Maximum Power Dissipation (TC = 25C) 240 W
EAS Single Pulsed Avalanche Energy 900 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.52 C/W
RJA Thermal Resistance, Junction to Ambient 45 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 150 - - V
IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 3.2 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 5.2 6.2 m
Dynamic Characteristics
Rg Gate Resistance f = 1.0MHz - 3.8 -
Ciss Input Capacitance VDS = 75V, VGS = 0V, f = 1.0MHz - 5800 - pF
Coss Output Capacitance - 550 - pF
Crss Reverse Transfer Capacitance - 17 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDS = 75V, VGS = 10V, RL = 3.75, RGEN = 3 - 21 - ns
tr Turn-On Rise Time - 39 - ns
td(off) Turn-Off Delay Time - 63 - ns
tf Turn-Off Fall Time - 32 - ns
Qg Total Gate Charge VDS = 75V, VGS = 0 to 10V, ID = 20A - 83 - nC
Qgs Gate-Source Charge - 28 - nC
Qgd Gate-Drain Charge - 19.2 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 130 A
ISM Maximum Pulsed Current - - 190 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 1A - - 1.0 V
Trr Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s - 98 - ns
Qrr Body Diode Reverse Recovery Charge IF = 15A, dIF/dt = 100A/s - 316 - nC

2504151445_MIRACLE-POWER-MSE002C_C47361113.pdf

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