N Channel Power MOSFET 700V 20A Rating MIRACLE POWER MJF20N70 for PC Power Supplies and LED Lighting
Key Attributes
Model Number:
MJF20N70
Product Custom Attributes
Drain To Source Voltage:
705V
Current - Continuous Drain(Id):
20A
RDS(on):
240mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.28pF
Input Capacitance(Ciss):
1.547nF
Pd - Power Dissipation:
33W
Output Capacitance(Coss):
134pF
Gate Charge(Qg):
32.23nC@13V
Mfr. Part #:
MJF20N70
Package:
TO-220F
Product Description
Product Overview
The MJF20N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology. Designed for easy gate switching control and 100% avalanche tested, this MOSFET offers a 700V rating with a continuous drain current of 20A and a typical on-resistance of 0.21 at VGS = 10V. It is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| - | Voltage, Current, RDS(on) | VGS = 10V | - | 0.21 | - | |
| - | Drain-Source Voltage | - | - | - | 700 | V |
| - | Drain Current-Continuous (TC = 25C) | - | - | - | 20 | A |
| - | Avalanche Tested | - | 100% | - | - | - |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC = 25C unless otherwise noted | - | - | 700 | V |
| VGS | Gate-Source Voltage | - | - | - | 30 | V |
| ID | Drain Current-Continuous, TC = 25C | - | - | - | 20 | A |
| IDM | Drain Current-Pulsed | - | - | - | 60 | A |
| PD | Maximum Power Dissipation, TC = 25C | - | - | - | 33 | W |
| dv/dt | Peak Diode Recovery dv/dt | - | - | - | 15 | V/ns |
| EAS | Single Pulsed Avalanche Energy | - | - | - | 500 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | - | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | 3.8 | - | C/W |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 80 | - | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 705 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 700, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 10A | - | 0.21 | 0.24 | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 11.1 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 1547 | - | pF |
| Coss | Output Capacitance | - | - | 134 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 5.28 | - | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 8A, RG = 3.4 | - | 12.4 | - | ns |
| tr | Turn-On Rise Time | - | - | 21.6 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 52 | - | ns |
| tf | Turn-Off Fall Time | - | - | 18.8 | - | ns |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 8A | - | 32.23 | - | nC |
| Qgs | Gate-Source Charge | - | - | 8.24 | - | - |
| Qgd | Gate-Drain Charge | - | - | 10.85 | - | - |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.72 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 8A, dIF/dt = 100A/s | - | 275 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 8A, dIF/dt = 100A/s | - | 3.81 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 8A, dIF/dt = 100A/s | - | 25.6 | - | A |
2504151445_MIRACLE-POWER-MJF20N70_C47361096.pdf
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