High breakdown voltage and low threshold voltage transistor MICROCHIP TN2435N8-G for power management
Key Attributes
Model Number:
TN2435N8-G
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@10V,750mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
200pF
Pd - Power Dissipation:
-
Mfr. Part #:
TN2435N8-G
Package:
SOT-89-3
Product Description
Product Overview
The TN2435 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET utilizing a vertical DMOS structure and a silicon-gate manufacturing process. It offers the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it suitable for a wide range of switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: TN2435
- Datasheet Document Number: DS20005946A
- Package Type: 3-lead SOT-89 (TO-243AA)
- Material: Vertical DMOS structure, Silicon-gate manufacturing process
- Certifications: Pb-free JEDEC designator for Matte Tin (Sn)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Drain-to-Source Breakdown Voltage | BVDSS | 350 | - | - | V | VGS = 0V, ID = 250 A |
| Gate Threshold Voltage | VGS(th) | 0.8 | - | 2.5 | V | VGS = VDS, ID = 1 mA |
| Gate Body Leakage Current | IGSS | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| Zero-Gate Voltage Drain Current | IDSS | - | - | 10 | A | VGS = 0V, VDS = Maximum rating |
| On-State Drain Current | ID(ON) | 0.5 | - | - | A | VGS = 4.5V, VDS = 25V |
| Static Drain-to-Source On-State Resistance | RDS(ON) | - | - | 15 | VGS = 3V, ID = 150 mA | |
| Forward Transconductance | GFS | 125 | - | - | mmho | VDS = 20V, ID = 350 mA |
| Input Capacitance | CISS | - | 125 | 200 | pF | VGS = 0V, VDS = 25V, f = 1 MHz |
| Common-Source Output Capacitance | COSS | - | 25 | 70 | pF | - |
| Reverse Transfer Capacitance | CRSS | - | 8 | 25 | pF | - |
| Turn-On Delay Time | td(ON) | - | 5 | 20 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 |
| Rise Time | tr | - | 10 | 20 | ns | - |
| Turn-Off Delay Time | td(OFF) | - | 28 | 40 | ns | - |
| Fall Time | tf | - | 10 | 30 | ns | - |
| Diode Forward Voltage Drop | VSD | - | - | 1.5 | V | VGS = 0V, ISD = 750 mA |
| Reverse Recovery Time | trr | - | 300 | - | ns | VGS = 0V, ISD = 750 mA |
| Operating Ambient Temperature | TA | -55 | - | +150 | C | - |
| Storage Temperature | TS | -55 | - | +150 | C | - |
| Package Thermal Resistance (Junction-to-Ambient) | JA | - | 73 | - | C/W | 3-lead SOT-89 |
| Package Thermal Resistance (Junction-to-Case) | JC | - | 15 | - | C/W | 3-lead SOT-89 |
| Continuous Drain Current | ID (Continuous) | - | 365 | - | mA | Limited by maximum rated TJ, TA = 25C, Mounted on an FR5 Board |
| Pulsed Drain Current | ID (Pulsed) | - | 1.8 | - | A | TA = 25C, Mounted on an FR5 Board |
| Power Dissipation at TA = 25C | PD | - | 1.6 | - | W | Mounted on an FR5 Board |
2410121719_MICROCHIP-TN2435N8-G_C629190.pdf
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