MDD Microdiode Semiconductor MDD68N10D N Channel MOSFET suitable for motor drives and power supplies
Key Attributes
Model Number:
MDD68N10D
Product Custom Attributes
Mfr. Part #:
MDD68N10D
Package:
TO-252
Product Description
Product Overview
This N-Channel MOSFET, produced using MDD's advanced Power Trench technology, is optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management in various applications including telecom, industrial automation, motor drives, and uninterruptible power supplies, as well as current switching in DC/DC and AC/DC (SR) sub-systems.
Product Attributes
- Brand: MDD
- Origin: Craftsman-Made Consciention Chip
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TA=25C (Note 1) | 68 | A | ||
| Pulsed Drain Current | IDM | (Note 2) | 272 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note 3) | 90.25 | mJ | ||
| Power Dissipation | P D | TA=25C | 45 | W | ||
| Thermal Resistance, steady-state | RJA | 2.0 | C/W | |||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.8 | 3.6 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | 8 | 9 | m | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=50V, ID=25A, RG=3 | 14 | ns | ||
| Turn on Rise Time | tr | VDS=50V, ID=25A, RG=3 | 58 | ns | ||
| Turn Off Fall Time | tf | VDS=50V, ID=25A, RG=3 | 24 | ns | ||
| Turn Off Delay Time | td(off) | VDS=50V, ID=25A, RG=3 | 50 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=30A, VGS=0V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=40A, di/dt=100A/s | 53 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=40A, di/dt=100A/s | 128 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V, VGS=0V, f=1MHz | 1645 | pF | ||
| Output Capacitance | Coss | VDS=40V, VGS=0V, f=1MHz | 743 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=40V, VGS=0V, f=1MHz | 22 | pF | ||
| Total Gate Charge | Qg | ID=25A, VGS=10V | 30 | nC | ||
| Gate Source Charge | Qgs | ID=25A, VGS=10V | 12 | nC | ||
| Gate Drain Charge | Qgd | ID=25A, VGS=10V | 5 | nC | ||
2512021845_MDD-Microdiode-Semiconductor-MDD68N10D_C53069242.pdf
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