Microdiode Semiconductor MDD MDD5N50D 500V N Channel MOSFET Featuring Low RDS on and RoHS Compliance
Key Attributes
Model Number:
MDD5N50D
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.35Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4pF
Output Capacitance(Coss):
80.3pF
Input Capacitance(Ciss):
537.5pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
12.8nC@400V
Mfr. Part #:
MDD5N50D
Package:
TO-252
Product Description
Product Overview
The MDD5N50D is a 500V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for use in electronic ballasts, switched-mode power supplies, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 500 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 5 | A | ||
| Power Dissipation | PD | 75 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~150 | |||
| Pulsed Drain Current | IDM | (Note 1) | 20 | A | ||
| Avalanche Energy Single Pulsed | EAS | (Note 2) | 210 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | (Note 3) | 5 | V/ns | ||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-to-case | RJC | TO-252 | 1.67 | C/W | ||
| Thermal resistance, Junction-to-ambient | RJA | TO-252 | 110 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 500 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=500V, VGS=0V | 1 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2.5A | 1.35 | 1.6 | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 537.5 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 80.3 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 4 | pF | ||
| Total Gate Charge | Qg | VDS=400V, VGS=10V, ID=5A (Note1,2) | 12.8 | nC | ||
| Gate Source Charge | Qgs | VDS=400V, VGS=10V, ID=5A (Note1,2) | 3.9 | nC | ||
| Gate Drain Charge | Qgd | VDS=400V, VGS=10V, ID=5A (Note1,2) | 4.6 | nC | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=250V, ID=5A, RG=10 (Note1,2) | 10.3 | ns | ||
| Turn on Rise Time | tr | VDS=250V, ID=5A, RG=10 (Note1,2) | 33.1 | ns | ||
| Turn Off Delay Time | td(off) | VDS=250V, ID=5A, RG=10 (Note1,2) | 29.4 | ns | ||
| Turn Off Fall Time | tf | VDS=250V, ID=5A, RG=10 (Note1,2) | 13.2 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | 5 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=5A, VGS=0V | 1.5 | V | ||
| Max Pulsed Current | ISM | 20 | A | |||
| Body Diode Reverse Recovery Time | trr | VR=250V, IF=5A, -diF/dt =100A/s | 319.2 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | VR=250V, IF=5A, -diF/dt =100A/s | 1.6 | uC | ||
2506191136_MDD-Microdiode-Semiconductor-MDD5N50D_C45990957.pdf
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