Low voltage N channel MOSFET MEM2310M3G ideal for battery management and high speed switching circuits
Key Attributes
Model Number:
MEM2310M3G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-40℃~+150℃
RDS(on):
37mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Input Capacitance(Ciss):
823pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
11nC@15V
Mfr. Part #:
MEM2310M3G
Package:
SOT-23-3L
Product Description
Product Overview
The MEM2310M3G Series is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications and low power dissipation in a very small outline surface mount package. It is ideal for battery management, high-speed switching, and low-power DC to DC converters.
Product Attributes
- Brand: Microne
- Series: MEM2310M3G
- Package: SOT23-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | ±12 | V | |||
| Drain Current (TA=25) | ID | 5.8 | A | |||
| Drain Current (TA=70) | ID | 4.9 | A | |||
| Pulsed Drain Current | IDM | 30 | A | |||
| Total Power Dissipation (TA=25) | Pd | 1.4 | W | |||
| Total Power Dissipation (TA=70) | Pd | 0.74 | W | |||
| Operating Junction Temperature | Tj | 150 | ||||
| Storage Temperature Range | Tstg | -65 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient (t≤10s) | RθJA | 65 | 90 | /W | ||
| Thermal Resistance, Junction-to-Ambient (Steady-State) | RθJA | 85 | 125 | /W | ||
| Thermal Resistance, Junction-to-Lead (Steady-State) | RθJL | 43 | 60 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 30 | 35 | V | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250uA | 0.7 | 0.88 | 1.4 | V |
| Gate-Body Leakage | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate-Body Leakage | IGSS | VDS=0V, VGS=-12V | -100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1000 | nA | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.8A | 25 | 30 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | 28 | 33 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=4A | 37 | 50 | mΩ | |
| Forward Transconductance | gFS | VDS = 5 V, ID = 5A | 10 | 15 | S | |
| Maximum Body-Diode Continuous Current | Is | 2.5 | A | |||
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=1A | 0.72 | 1.0 | V | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 823 | 1030 | pF | |
| Output Capacitance | Coss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 99 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 77 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.2 | 3.6 | Ω | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 7 | 14 | ns | |
| Rise Time | tr | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 15 | 30 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 38 | 76 | ns | |
| Fall-Time | tf | VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω | 3 | 6 | ns | |
| Total Gate Charge | Qg | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 11 | 14.3 | nC | |
| Gate-Source Charge | Qgs | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 1.6 | 2.08 | nC | |
| Gate-Drain Charge | Qg | VDS = 15 V, VGS = 4.5 V, ID = 5.8A | 2.8 | 3.64 | nC | |
2410121251_MICRONE-MEM2310M3G_C489595.pdf
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