Power Amplifier Transistor Minos MJE15033G Featuring Silicon Bipolar Epitaxial Planar Construction and High Breakdown Voltage
Product Overview
This is a Silicon Bipolar Epitaxial Planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio amplifier pre-stage driving. It offers a large output current of up to 8A and a high breakdown voltage of VCEO 250V. The device operates effectively in a wide area, supporting 1.8A/80V for 1 second, and boasts superior frequency characteristics with fT > 30MHz. It is suitable for continuous load operation under demanding conditions such as high temperature, high voltage, and large current, as well as significant temperature variations. However, reliability may decrease when operated at maximum current, temperature, and voltage.
Product Attributes
- Brand: MNS-KX
- Package Type: TO-220
- Package Type: TO-220EW
Technical Specifications
| Parameter Name | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCBO | 250 | V |
| Collector-Base Voltage | VCEO | 250 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 8 | A |
| Base Current | IB | 2 | A |
| Collector Power Dissipation (Tc=25) | PC | 50 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | TSTG | -55~150 |
Electrical Characteristics (Tc=25)
| Parameter Name | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Leakage | VCB=250V; IE=0 | 1 | mA | ||
| Emitter-Base Breakdown Leakage | VEB=5V; Ic=0 | 1 | mA | ||
| Collector-Emitter Breakdown Voltage | IC=5mA,IB=0 | 250 | V | ||
| DC Current Gain | VCE=5V; IC=0.5A | 70 | |||
| Collector-Emitter Saturation Voltage | IC=1A; IB=-100mA | 0.5 | V | ||
| Base-Emitter Voltage | VCE=5V;IC=1A | 1.0 | V | ||
| Characteristic Frequency | VCE=5V; IC=1A | 30 | MHz |
Thermal Characteristics
| Parameter | Parameter Description | Typical Value | Condition |
|---|---|---|---|
| RJC | Junction to Case Thermal Resistance | 0.30 | /W |
Important Notes
1. Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Please adhere to absolute maximum ratings during circuit design.
2. When installing a heat sink, pay attention to torsional moment and the smoothness of the heat sink.
3. MOSFETs are sensitive to static electricity; protect them from damage during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026 Shennan Middle Road, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
2410121331_Minos-MJE15033G_C7587864.pdf
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