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quality Low resistance MOSFET Megain MGC068N10N with fast switching speeds and 90A continuous drain current factory
quality Low resistance MOSFET Megain MGC068N10N with fast switching speeds and 90A continuous drain current factory

Low resistance MOSFET Megain MGC068N10N with fast switching speeds and 90A continuous drain current

Key Attributes
Model Number: MGC068N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
90A
RDS(on):
6.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Output Capacitance(Coss):
294pF
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
2.176nF
Gate Charge(Qg):
33.1nC@10V
Mfr. Part #:
MGC068N10N
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MGC068N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering high performance for high-frequency switching applications. It boasts 100V drain-source voltage, 90A continuous drain current, and low on-state resistance (typically 6.8 m at VGS=10V). This device is 100% EAS guaranteed, provides fast switching speeds, and is available as a Green Device. Its applications include high-frequency switching, synchronous rectification, and DC/DC converters.

Product Attributes

  • Brand: MEGA
  • Product Code: MGC068N10N
  • Technology: Advanced Trench MOS Technology
  • Certifications: Green Device Available

Technical Specifications

Parameter Condition Min Typ Max Units
VDS Drain-Source Voltage - - 100 V
VGS Gate-Source Voltage - - 20 V
ID Drain Current Continuous (TC=25) - - 90 A
ID Drain Current Continuous (TC=70) - - 72 A
IDM Pulsed Drain Current - - 360 A
EAS Single Pulse Avalanche Energy - - 107 mJ
IAS Avalanche Current - - 35.2 A
PD Total Power Dissipation (TC=25C) - - 104 W
TSTG Storage Temperature Range -55 - 150
TJ Operating Junction Temperature Range -55 - 150
RJA Thermal Resistance Junction-Ambient - - 70 /W
RJC Thermal Resistance Junction to Case - 1.0 1.4 /W
BVDSS Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) 100 - - V
RDS(ON) Drain-Source On-state Resistance (VGS=10V, ID=13.5A) - 6.8 8 m
VGS(th) Gate Threshold Voltage (VGS=VDS, ID=250uA) 2 - 3.5 V
IDSS Drain-Source Leakage Current (VDS=80V, VGS=0V) - - 1 uA
IDSS Drain-Source Leakage Current (VDS=80V, VGS=0V, TJ=55) - - 5 uA
IGSS Gate-Source Leakage Current (VGS=20V, VDS=0V) - - 100 nA
gfs Forward Transconductance (VDS=10V, ID=20A) - 44 - S
Ciss Input Capacitance (VGS=0V, VDS=50V, F=1MHz) - 2176 - pF
Coss Output Capacitance - 294 - pF
Crss Reverse Transfer Capacitance - 7 - pF
Td(ON) Turn-on Delay Time (VGS=10V,VDD=50V, ID=13.5A,RG=3) - 11.6 - nS
Tr Turn-on Rise Time - 28.7 - nS
Td(OFF) Turn-off Delay Time - 26.4 - nS
Tf Turn-off Fall Time - 35.6 - nS
Qg Total Gate Charge (10V) (VGS=10V,VDS=50V, ID=13.5A) - 33.1 - nC
Qgs Gate-Source Charge - 10 - nC
Qgd Gate-Drain Charge - 5.1 - nC
IS Continuous Source Current (VG=VD=0V,Force Current) - - 90 A
VSD Diode Forward Voltage (IS=20A, VGS=0V) - - 1.1 V
trr Reverse Recovery Time (ID=13.5A, VDS=50V, di/dt=100A/us) - 45 - nS
Qrr Reverse Recovery Charge - 49.3 - nC

2506251635_Megain-MGC068N10N_C49242761.pdf

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