high voltage MOSFET MICROCHIP APT28M120B2 with low input capacitance and integrated slew rate control
Key Attributes
Model Number:
APT28M120B2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
29A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Number:
1 N-channel
Input Capacitance(Ciss):
9.67nF@25V
Pd - Power Dissipation:
1.135kW
Gate Charge(Qg):
300nC@10V
Mfr. Part #:
APT28M120B2
Package:
TO-247-3
Product Description
Product Overview
The APT28M120B2 and APT28M120L are high-speed, high-voltage N-channel switch-mode power MOSFETs from Microsemi's Power MOS 8 family. Featuring a proprietary planar stripe design for enhanced reliability and manufacturability, these MOSFETs offer low switching losses due to low input capacitance and ultra-low Crss. The integrated gate resistance and capacitance control slew rates, ensuring low EMI and reliable paralleling. Their high avalanche energy capability enhances reliability in various power converter circuits.
Product Attributes
- Brand: Microsemi
- Product Family: Power MOS 8
- RoHS Compliant: Yes
Technical Specifications
| Model | VBR(DSS) (V) | RDS(on) () | ID @ TC=25C (A) | ID @ TC=100C (A) | VGS(th) (V) | PD @ TC=25C (W) | RJC (C/W) | TJ, TSTG (C) | Package |
| APT28M120B2 / APT28M120L | 1200 | 0.53 | 29 | 18 | 3 - 4 | 300 | 0.11 | -55 to 150 | TO-264 |
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Continuous Drain Current @ TC = 25C | ID | 29 | A | VGS = 0V, ID = 250A | ||
| Continuous Drain Current @ TC = 100C | ID | 18 | A | Reference to 25C, ID = 250A | ||
| Pulsed Drain Current | IDM | 104 | A | VGS = 10V, ID = 14A | ||
| Gate-Source Voltage | VGS | 30 | V | VGS = VDS, ID = 2.5mA | ||
| Single Pulse Avalanche Energy | EAS | 2165 | mJ | VDS = 1200V | ||
| Avalanche Current, Repetitive or Non-Repetitive | IAR | 14 | A | TJ = 25C | ||
| Total Power Dissipation @ TC = 25C | PD | 300 | W | VGS = 30V | ||
| Junction to Case Thermal Resistance | RJC | 0.11 | C/W | TJ = 25C | ||
| Case to Sink Thermal Resistance, Flat, Greased Surface | RCS | 0.11 | C/W | TJ = 100C | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Soldering Temperature for 10 Seconds (1.6mm from case) | TL | 300 | C | |||
| Package Weight | WT | 0.22 | oz | |||
| Mounting Torque (TO-264 Package), 4-40 or M3 screw | Torque | 6.2 | 10 | inlbf / Nm | ||
| Drain-Source Breakdown Voltage | VBR(DSS) | 1200 | V | VGS = 0V, ID = 250A | ||
| Breakdown Voltage Temperature Coefcient | VBR(DSS)/TJ | 1.41 | V/C | Reference to 25C, ID = 250A | ||
| Drain-Source On Resistance | RDS(on) | 0.45 | 0.53 | VGS = 10V, ID = 14A | ||
| Gate-Source Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VGS = VDS, ID = 2.5mA |
| Threshold Voltage Temperature Coefcient | VGS(th)/TJ | -10 | mV/C | VDS = 1200V | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | 500 | A | TJ = 25C, VGS = 0V | |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS = 30V | ||
| Continuous Source Current (Body Diode) | IS | 29 | A | |||
| Pulsed Source Current (Body Diode) | ISM | 104 | A | |||
| Diode Forward Voltage | VSD | 1.29 | 1.41 | V | ISD = 14A, TJ = 25C, VGS = 0V | |
| Reverse Recovery Time | trr | 33 | ns | ISD = 14A, di/dt = 100A/s, TJ = 25C | ||
| Reverse Recovery Charge | Qrr | 10 | C | ISD 14A, di/dt 1000A/s, VDD = 100V, TJ = 125C | ||
| Peak Recovery dv/dt | dv/dt | 10 | V/ns | |||
| Forward Transconductance | gfs | 31 | S | VDS = 50V, ID = 14A | ||
| Input Capacitance | Ciss | 9670 | pF | VGS = 0V, VDS = 25V, f = 1MHz | ||
| Reverse Transfer Capacitance | Crss | 115 | pF | VGS = 0V, VDS = 0V to 800V | ||
| Output Capacitance | Coss | 715 | pF | VGS = 0 to 10V, ID = 14A, VDS = 600V | ||
| Effective Output Capacitance, Charge Related | Co(cr) | 275 | nC | Resistive Switching | ||
| Effective Output Capacitance, Energy Related | Co(er) | 140 | J | VDD = 800V, ID = 14A, RG = 2.2, VGG = 15V | ||
| Total Gate Charge | Qg | 50 | 140 | nC | ||
| Gate-Source Charge | Qgs | 30 | nC | |||
| Gate-Drain Charge | Qgd | 50 | nC | |||
| Turn-On Delay Time | td(on) | 31 | ns | |||
| Current Rise Time | tr | 170 | ns | |||
| Turn-Off Delay Time | td(off) | 48 | ns | |||
| Current Fall Time | tf | ns |
2411220335_MICROCHIP-APT28M120B2_C6861532.pdf
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