MICROCHIP TN2540N3 G Vertical DMOS FET N Channel device for amplification and switching performance
Key Attributes
Model Number:
TN2540N3-G
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
8Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
125pF
Pd - Power Dissipation:
1W
Mfr. Part #:
TN2540N3-G
Package:
TO-92-3
Product Description
Product Overview
The TN2540 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It utilizes a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general purpose line drivers, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: TN2540
- Datasheet Document: DS20005954A
- Copyright: 2020 Microchip Technology Inc.
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| DC ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 400 | V | VGS = 0V, ID = 100 A | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 2 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 2.5 | 4 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | |
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current | IDSS | 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||
| On-State Drain Current | ID(ON) | 0.3 | 0.5 | A | VGS = 4.5V, VDS = 25V | |
| On-State Drain Current | ID(ON) | 0.75 | 1 | A | VGS = 10V, VDS = 25V | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 8 | 12 | VGS = 4.5V, ID = 150 mA | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 8 | 12 | VGS = 10V, ID = 500 mA | ||
| Change in RDS(ON) with Temperature | RDS(ON) | 0.75 | %/C | VGS = 10V, ID = 500 mA (Note 1) | ||
| AC ELECTRICAL CHARACTERISTICS | ||||||
| Forward Transconductance | GFS | 125 | 200 | mmho | VDS = 25V, ID = 100 mA | |
| Input Capacitance | CISS | 95 | 125 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common-Source Output Capacitance | COSS | 20 | 70 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Reverse Transfer Capacitance | CRSS | 10 | 25 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Turn-On Delay Time | td(ON) | 20 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||
| Rise Time | tr | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||
| Turn-Off Delay Time | td(OFF) | 25 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||
| Fall Time | tf | 20 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||
| DIODE PARAMETER | ||||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 200 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 1A | ||
| TEMPERATURE SPECIFICATIONS | ||||||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| PACKAGE THERMAL RESISTANCE | ||||||
| 3-lead TO-92 | JA | 132 | C/W | |||
| 3-lead SOT-89 | JA | 73 | C/W | |||
| THERMAL CHARACTERISTICS | ||||||
| Package | ID (continuous) (mA) | ID (Pulsed) (A) | Power Dissipation at TA = 25C (W) | IDR (Note 1) (mA) | IDRM (A) | |
| 3-lead TO-92 | 175 | 2 | 1 | 175 | 2 | |
| 3-lead SOT-89 | 260 | 1.8 | 1.6 (Note 2) | 260 | 1.8 | |
2410121918_MICROCHIP-TN2540N3-G_C632582.pdf
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