Silicon N Channel Power MOSFET Minos MPF3N150 with Low On Resistance and High Voltage Rating
Key Attributes
Model Number:
MPF3N150
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Configuration:
-
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
9Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
1.938nF@25V
Gate Charge(Qg):
9.3nC
Mfr. Part #:
MPF3N150
Package:
TO-220F
Product Description
Product Overview
The MPF3N150 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances.
Product Attributes
- Brand: MNS (Shenzhen Minos Technology Co., Ltd.)
- Origin: China
- Material: Silicon N-Channel
- Certifications: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDSS | Drain-to-Source Breakdown Voltage | VGS=0V, ID=250A | 1500 | V | ||
| ID | Drain Current (continuous) | at Tc=25 | 3 | A | ||
| IDM | Drain Current (pulsed) | 12 | A | |||
| VGS | Gate to Source Voltage | +/-30 | V | |||
| Ptot | Total Dissipation | at Tc=25 | 250 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| EAS | Single Pulse Avalanche Energy | 125 | mJ | |||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V, ID=1.5A | 5.2 | 9.0 | ||
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=250A | 3.0 | 4.1 | 5.0 | V |
| IDSS | Drain to Source leakage Current | VDS=1500V, VGS= 0V | 1 | A | ||
| IGSS(F) | Gated to Source Foward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gated to Source Reverse Leakage | VGS= -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | 1938 | pF | ||
| Coss | Output Capacitance | 104 | pF | |||
| Crss | Reverse Transfer Capacitance | 10.2 | pF | |||
| td(on) | Turn-on Delay Time | VDD=750V,ID=3A, RG=10 | 33.8 | nS | ||
| tr | Turn-on Rise Time | 16.7 | nS | |||
| td(off) | Turn-off Delay Time | 56 | nS | |||
| tf | Turn-off Fall Time | 27.6 | nS | |||
| Qg | Total Gate Charge | VDS=750V ID=3A VGS=10V | 9.3 | nC | ||
| Qgs | Gate-Source Charge | 174.9 | nC | |||
| Qgd | Gate-Drain Charge | 5.3 | nC | |||
| ISD | S-D Current(Body Diode) | 3 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 12 | A | |||
| VSD | Diode Forward Voltage | VGS=0V, IDS=3.0A | 1.5 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=3.0A di/dt=100A/us | 302.3 | nS | ||
| Qrr | Reverse Recovery Charge | 9.9 | nC | |||
| RJC | Junction-to-Case | 1.7 | /W |
2412021740_Minos-MPF3N150_C42401746.pdf
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