High Avalanche Voltage N Channel Power MOSFET Minos MDT30N06L with Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
MDT30N06L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
66pF
Number:
1 N-channel
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
MDT30N06L
Package:
TO-252
Product Description
Product Overview
The MDT30N06L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 80 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 44 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 56 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 3.4 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=10A | - | 25 | 30 | mΩ |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=4.5V, ID=10A | - | 30 | 40 | mΩ |
| Forward Transconductance | gFS | VDS=5V,ID=10A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 670 | - | pF |
| Output Capacitance | Coss | - | 76 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 66 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V,RGEN=10Ω | - | 19.2 | - | nS |
| Turn-on Rise Time | tr | - | 6.4 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 29.2 | - | nS | |
| Turn-Off Fall Time | tf | - | 8.2 | - | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=10A VGS=10V | - | 21 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 6.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25,IF=10A,di/dt=100A/uS note3 | - | 33.6 | - | nS |
| Reverse Recovery Charge | Qrr | - | 32.1 | - | nC | |
2411220027_Minos-MDT30N06L_C5240683.pdf
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