N Channel MOSFET MICRONE MEM12N65A3G Featuring Fast Switching and High Voltage for Power Circuits
Key Attributes
Model Number:
MEM12N65A3G
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-40℃~+150℃
RDS(on):
640mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Output Capacitance(Coss):
152pF
Pd - Power Dissipation:
51W
Input Capacitance(Ciss):
1.476nF
Gate Charge(Qg):
24.15nC@10V
Mfr. Part #:
MEM12N65A3G
Package:
TO-220F
Product Description
Product Overview
The MEM12N65 is an N-CHANNEL POWER MOSFET designed for switching regulator and general switching applications. It offers high voltage and high speed capabilities with features such as low CRSS and fast switching. This MOSFET is suitable for various switching applications.
Product Attributes
- Brand: MICRONE
- Origin: www.microne.com.cn
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| General Description | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current (TA=25) | ID | 12 | A | |||
| Drain Current (TA=100) | ID | 9 | A | |||
| Pulsed Drain Current | IDM | 1,2 | 48 | A | ||
| Total Power Dissipation (TA=25) | Pd | 51 | W | |||
| Operating Junction Temperature Range | TJ | -40 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 2.7 | 3 | /W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 650 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 2.0 | 4.0 | V | |
| Gate-Body Leakage | IGSS | VDS=0VVGS=30V | 100 | nA | ||
| Gate-Body Leakage | IGSS | VDS=0VVGS=-30V | -100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V VGS=0V | 0.2 | 1 | µA | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=3.5A | 0.64 | 0.8 | Ω | |
| Forward Transconductance | gFS | VDS =15V, ID= 3A | 2 | 10 | S | |
| Drain-Source Diode Forward Continuous Current | Is | VGS=0V | 12 | A | ||
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=12A | 1.4 | V | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz(Note1,2) | 1476 | pF | ||
| Output Capacitance | Coss | 152 | pF | |||
| Reverse Transfer Capacitance | Crss | 4.5 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 325 V, RG = 25Ω VGS = 10V, ID = 12A(Note2) | 37 | ns | ||
| Rise Time | tr | 61 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Fall-Time | tf | 46 | ns | |||
| Total Gate Charge | Qg | VDS = 520V, VGS = 10V, ID = 12A(Note1,2) | 24.15 | nC | ||
| Gate-Source Charge | Qgs | 7.86 | ||||
| Gate-Drain Charge | Qg | 7.47 | ||||
Note: 1. Not influenced by junction temperature. 2. Pulse width <300µs , duty cycle <2%.
2409272232_MICRONE-MEM12N65A3G_C2927392.pdf
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