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quality Low noise figure and high gain Mini Circuits TAV1-331 D PHEMT MMIC transistor for wide frequency range factory
quality Low noise figure and high gain Mini Circuits TAV1-331 D PHEMT MMIC transistor for wide frequency range factory

Low noise figure and high gain Mini Circuits TAV1-331 D PHEMT MMIC transistor for wide frequency range

Key Attributes
Model Number: TAV1-331+
Product Custom Attributes
Mfr. Part #:
TAV1-331+
Package:
SMD-4P
Product Description

Product Overview

The Mini-Circuits TAV1-331+ is a D-PHEMT MMIC transistor designed for a wide operating frequency range of 10 to 4000 MHz. This device offers a compelling combination of high gain (24.1 dB typ. at 300 MHz) and extremely low noise figure (0.6 dB typ. at 300 MHz), contributing to reduced overall system noise. Its high Output IP3 (+31.8 dBm typ. at 300 MHz) and Output Power at 1dB Compression (+20.1 dBm typ. at 300 MHz), coupled with low current consumption (60mA), make it an ideal choice for sensitive receiver applications in cellular, ISM, GSM, WCDMA, WiMax, WLAN, UNII, and HIPERLAN systems. Manufactured using highly repeatable D-PHEMT technology, it is housed in a compact 1.4x1.2mm MCLP package and requires external biasing and matching. It may serve as a replacement for the Broadcom ATF-331M4.

Product Attributes

  • Brand: Mini-Circuits
  • Technology: D-PHEMT (Depletion mode Pseudomorphic High Electron Mobility Transistor)
  • Package: MCLP (1.4x1.2mm)
  • Case Style: TE2769
  • ESD Rating: Human Body Model (HBM): Class 0 (<250V)
  • MSL Rating: MSL1
  • Lead Finish: Matte-Tin plated

Technical Specifications

Parameter Condition Min. Typ. Max. Units
DC Specifications
VGS Operational Gate Voltage VDS=4V, IDS=60 mA -0.96 -0.69 -0.51 V
Vp Pinch-off Voltage VDS=1.5V, IDS= 10% of Idss -0.81 V
IDSS Saturated Drain Current VDS=4V, VGS=0 V 228 mA
GM Transconductance VDS=4V, Gm= IDS/VGS 282 mS
IGDO Gate to Drain Leakage Current VGD=-5V 1000 uA
IGSS Gate leakage Current VGD=VGS=-4V 600 A
Specifications, Z0=50 Ohms (Figure 1)
NF Noise Figure VDS=4V, IDS=60 mA, f=50 MHz 0.9 dB
VDS=4V, IDS=60 mA, f=300 MHz 0.6 dB
VDS=4V, IDS=60 mA, f=900 MHz 0.5 dB
VDS=4V, IDS=60 mA, f=2000 MHz 0.6 0.8 dB
VDS=4V, IDS=60 mA, f=4000 MHz 1.0 dB
Gain VDS=4V, IDS=60 mA, f=10 MHz 24.6 dB
VDS=4V, IDS=60 mA, f=300 MHz 24.1 dB
VDS=4V, IDS=60 mA, f=900 MHz 21.6 dB
VDS=4V, IDS=60 mA, f=2000 MHz 13.9 17.0 dB
VDS=4V, IDS=60 mA, f=4000 MHz 12.0 dB
OIP3 Output IP3 VDS=4V, IDS=60 mA, f=10 MHz 31.7 dBm
VDS=4V, IDS=60 mA, f=300 MHz 31.8 dBm
VDS=4V, IDS=60 mA, f=900 MHz 32.9 dBm
VDS=4V, IDS=60 mA, f=2000 MHz 34.6 dBm
VDS=4V, IDS=60 mA, f=4000 MHz 37.3 dBm
P1dB Power output at 1 dB Compression VDS=4V, IDS=60 mA, f=10 MHz 19.6 dBm
VDS=4V, IDS=60 mA, f=300 MHz 20.1 dBm
VDS=4V, IDS=60 mA, f=900 MHz 18.0 20.4 dBm
VDS=4V, IDS=60 mA, f=2000 MHz 21.3 dBm
VDS=4V, IDS=60 mA, f=4000 MHz 21.3 dBm
JC Thermal Resistance 106 C/W
Maximum Ratings
VDS Drain-Source Voltage (1) 5 V
VGS Gate-Source Voltage (1) -5 V
VGD Gate-Drain Voltage (1) -5 V
IDS Drain Current (1) 149 mA
PDISS Total Dissipated Power 400 mW
PIN RF Input Power 20 dBm
TCH Channel Temperature 150 C
TOP Operating Temperature -40 85 C
TSTD Storage Temperature -65 150 C

2410010103_Mini-Circuits-TAV1-331-_C3290177.pdf

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