Soft Recovery Rectifier Diode MICROCHIP APT60DQ120BG for Inverters Converters and Motor Controllers
Key Attributes
Model Number:
APT60DQ120BG
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@1.2kV
Reverse Recovery Time (trr):
320ns
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
1.2kV
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
3.3V@60A
Current - Rectified:
60A
Mfr. Part #:
APT60DQ120BG
Package:
TO-247-2
Product Description
Product Overview
The APT60DQ120BG is an Ultrafast Soft Recovery Rectifier Diode designed for high-frequency switching applications. It offers benefits such as higher switching frequency, low switching losses, reduced EMI, and increased system power density. Its features include ultrafast recovery times, soft recovery characteristics, low forward voltage, low leakage current, and avalanche energy rating, making it suitable for power factor correction, switch-mode power supplies, inverters/converters, motor controllers, and as a freewheeling or snubber/clamp diode.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant, AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | 1200 | V | |
| Maximum working peak reverse voltage | VRWM | 1200 | V | |
| Maximum average forward current | IF(AV) | 60 | A | T = 103 C, duty cycle = 0.5 |
| RMS forward current | IF(RMS) | 87 | A | |
| Non-repetitive forward surge current | IFSM | 540 | A | T = 45 C, 8.3 ms |
| Avalanche energy | EAVL | 20 | mJ | 1 A, 40 mH |
| Operating and storage temperature range | T , T | 55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Junction-to-case thermal resistance | RJC | 0.40 | C/W | Min |
| Package weight | WT | 5.9 | g | Max |
| Maximum mounting torque | Torque | 1.1 | N-m | |
| Forward voltage | VF | 2.8 - 3.3 | V | I = 60 A |
| Forward voltage | 3.35 | V | I = 120 A | |
| Forward voltage | 2.11 | V | I = 60 A, T = 125 C | |
| Maximum reverse leakage current | IRM | 100 | A | V = 1200 V |
| Maximum reverse leakage current | 500 | A | V = 1200 V, T = 125 C | |
| Junction capacitance | CJ | 37 | pF | V = 200 V |
| Reverse recovery time | trr | 30 | ns | I = 1 A, di /dt = 100 A/s, V = 30 V, T = 25 C |
| Reverse recovery time | trr | 320 | ns | I = 60 A, di /dt = 200 A/s, V = 800 V, T = 25 C |
| Reverse recovery charge | Qrr | 630 | nC | |
| Maximum reverse recovery current | IRRM | 5 | A | |
| Reverse recovery time | trr | 420 | ns | I = 60 A, di /dt = 200 A/s, V = 800 V, T = 125 C |
| Reverse recovery charge | Qrr | 2810 | nC | |
| Maximum reverse recovery current | IRRM | 12 | A | |
| Reverse recovery time | trr | 190 | ns | I = 60 A, di /dt = 1000 A/s, V = 800 V, T = 125 C |
| Reverse recovery charge | Qrr | 4415 | nC | |
| Maximum reverse recovery current | IRRM | 38 | A |
2411220027_MICROCHIP-APT60DQ120BG_C5125750.pdf
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