High current rectifier diode MICROCHIP APT60DQ60BG designed for switching in power conversion circuits
Key Attributes
Model Number:
APT60DQ60BG
Product Custom Attributes
Reverse Leakage Current (Ir):
25uA@600V
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
2.4V@60A
Current - Rectified:
60A
Mfr. Part #:
APT60DQ60BG
Package:
TO-247-2
Product Description
Product Overview
The APT60DQ60BG is an ultra-fast soft recovery rectifier diode featuring fast switching speeds, low forward voltage, and low leakage current. It is designed for high-frequency applications, offering benefits such as reduced switching losses, lower EMI, and improved system reliability. This AEC-Q101 qualified device is suitable for various power electronics applications including PFC, inverters, SMPS, and bridge circuits.
Product Attributes
- Brand: Microsemi
- Certifications: AEC-Q101 qualified, RoHS compliant
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Maximum DC reverse voltage | VR | 600 | V | |
| Maximum peak repetitive reverse voltage | VRRM | 600 | V | |
| Maximum working peak reverse voltage | VRWM | 600 | V | |
| Maximum average forward current | IF(AV) | 60 | A | TC = 110 C, duty cycle = 0.5 |
| RMS forward current | IF(RMS) | 94 | A | square wave, 50% duty |
| Non-repetitive forward surge current | IFSM | 600 | A | TA = 45 C, 8.3 ms |
| Avalanche energy | EAVL | 20 | mJ | 1 A, 40 mH |
| Operating and storage temperature range | TJ, TSTG | 55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Junction-to-case thermal resistance | RJC | 0.44 | C/W | |
| Forward Voltage | VF | 2.0 - 2.4 | V | IF = 60 A |
| Forward Voltage | VF | 2.44 | V | IF = 120 A |
| Forward Voltage | VF | 1.7 | V | IF = 60 A, TJ = 125 C |
| Maximum reverse leakage current | IRM | 25 | A | VR = 600 V |
| Maximum reverse leakage current | IRM | 500 | A | VR = 600 V, TJ = 125 C |
| Junction capacitance | CJ | 75 | pF | VR = 200 V |
| Reverse recovery time | trr | 26 | ns | IF = 1 A, diF/dt = 100 A/s, VR = 30 V, TJ = 25 C |
| Reverse recovery time | trr | 35 | ns | IF = 60 A, diF/dt = 200 A/s, VR = 400 V, TJ = 25 C |
| Reverse recovery charge | Qrr | 45 | nC | IF = 60 A, diF/dt = 200 A/s, VR = 400 V, TJ = 25 C |
| Maximum reverse recovery current | IRRM | 4 | A | IF = 60 A, diF/dt = 200 A/s, VR = 400 V, TJ = 25 C |
| Reverse recovery time | trr | 175 | ns | IF = 60 A, diF/dt = 200 A/s, VR = 400 V, TJ = 125 C |
| Reverse recovery charge | Qrr | 680 | nC | IF = 60 A, diF/dt = 200 A/s, VR = 400 V, TJ = 125 C |
| Maximum reverse recovery current | IRRM | 8 | A | IF = 60 A, diF/dt = 200 A/s, VR = 400 V, TJ = 125 C |
| Reverse recovery time | trr | 100 | ns | IF = 60 A, diF/dt = 1000 A/s, VR = 400 V, TJ = 125 C |
| Reverse recovery charge | Qrr | 1380 | nC | IF = 60 A, diF/dt = 1000 A/s, VR = 400 V, TJ = 125 C |
| Maximum reverse recovery current | IRRM | 26 | A | IF = 60 A, diF/dt = 1000 A/s, VR = 400 V, TJ = 125 C |
2410010201_MICROCHIP-APT60DQ60BG_C5444765.pdf
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