Nexperia PBSS4230T 215 NPN BISS Transistor Providing Switching for LCD Backlighting and Supply Lines
Key Attributes
Model Number:
PBSS4230T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
480mW
Transition Frequency(fT):
230MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4230T,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PBSS4230T is an NPN BISS transistor in a SOT23 package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to increased efficiency and reduced heat generation. This makes it a cost-effective alternative to MOSFETs in specific applications. Key applications include power management (DC/DC conversion, supply line switching, battery chargers, LCD backlighting) and peripheral driving (low supply voltage applications, inductive loads like relays, buzzers, and motors).
Product Attributes
- Brand: Nexperia
- Product Type: NPN BISS Transistor
- Package Type: SOT23
- PNP Complement: PBSS5230T
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-emitter voltage) | Open base | - | - | 30 | V |
| IC (Collector current, DC) | - | - | - | 2 | A |
| ICM (Peak collector current) | - | - | - | 3 | A |
| RCEsat (Equivalent on-resistance) | IC = 500 mA; IB = 50 mA; note 1 | - | 140 | 200 | m |
| VCEsat (Collector-emitter saturation voltage) | IC = 100 mA; IB = 1 mA | - | 45 | 70 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 500 mA; IB = 50 mA | - | 70 | 100 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 750 mA; IB = 15 mA | - | 120 | 180 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 1 A; IB = 50 mA; note 1 | - | 130 | 180 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 2 A; IB = 200 mA; note 1 | - | 240 | 320 | mV |
| hFE (DC current gain) | VCE = 2 V; IC = 100 mA | 350 | 470 | - | - |
| hFE (DC current gain) | VCE = 2 V; IC = 500 mA | 300 | 450 | - | - |
| hFE (DC current gain) | VCE = 2 V; IC = 1 A | 300 | 420 | - | - |
| hFE (DC current gain) | VCE = 2 V; IC = 2 A | 150 | 250 | - | - |
| fT (Transition frequency) | IC = 100 mA; VCE = 10 V; f = 100 MHz | 100 | 230 | - | MHz |
| Cc (Collector capacitance) | VCB = 10 V; IE = Ie = 0; f = 1 MHz | - | 15 | 20 | pF |
| VCBO (Collector-base voltage) | Open emitter | - | - | -40 | V |
| VEBO (Emitter-base voltage) | Open collector | - | - | -5 | V |
| IBM (Peak base current) | - | - | - | -300 | mA |
| Ptot (Total power dissipation) | Tamb 25 C; note 1 | - | - | 300 | mW |
| Ptot (Total power dissipation) | Tamb 25 C; note 2 | - | - | 480 | mW |
| Tstg (Storage temperature) | - | -65 | - | 150 | C |
| Tj (Junction temperature) | - | - | - | 150 | C |
| Tamb (Operating ambient temperature) | - | -65 | - | 150 | C |
| Rth j-a (Thermal resistance junction to ambient) | in free air; note 1 | - | 417 | - | K/W |
| Rth j-a (Thermal resistance junction to ambient) | in free air; note 2 | - | 260 | - | K/W |
| ICBO (Collector-base cut-off current) | VCB = 30 V; IE = 0 | - | - | 100 | nA |
| ICBO (Collector-base cut-off current) | VCB = 30 V; IE = 0; Tj = 150 C | - | - | 50 | A |
| IEBO (Emitter-base cut-off current) | VEB = 4 V; IC = 0 | - | - | 100 | nA |
| VBEsat (Base-emitter saturation voltage) | IC = 2 A; IB = 200 mA; note 1 | - | - | 1.1 | V |
| VBEon (Base-emitter turn-on voltage) | VCE = 2 V; IC = 100 mA | - | - | 0.75 | V |
Note 1: Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
Note 2: Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm.
Note: Pulse test: tp 300 s; 0.02.
2410010131_Nexperia-PBSS4230T-215_C456109.pdf
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