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quality Durable NPN silicon transistor Minos TIP41C designed for audio power amplification in TO220 package factory
quality Durable NPN silicon transistor Minos TIP41C designed for audio power amplification in TO220 package factory

Durable NPN silicon transistor Minos TIP41C designed for audio power amplification in TO220 package

Key Attributes
Model Number: TIP41C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
65W
Transition Frequency(fT):
3MHz
Type:
NPN
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
TIP41C
Package:
TO-220
Product Description

Product Overview

This NPN silicon transistor is designed for audio power amplification. It offers reliable performance with key electrical parameters and is housed in a TO-220 package, suitable for various audio applications.

Product Attributes

  • Brand: MNS
  • Type: NPN SILICON TRANSISTOR
  • Package: TO-220
  • Origin: Shenzhen Minos (Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change without prior notice.)

Technical Specifications

Parameter Symbol Description Min Typical Max Unit Test Conditions
Absolute Maximum Ratings (Ta=25)
Storage Temperature Tstg -55 150
Junction Temperature Tj 150
Collector Power Dissipation (TC=25) PC 65 W
Collector Power Dissipation (TA =25) PC 2 W
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 6 A
Base Current IB 2 A
Electrical Characteristics (Ta=25)
Collector-Emitter Cutoff Current ICEO 0.7 mA VCE=60V, IB=0
Collector-Base Cutoff Current IEBO 1 mA VEB=5V, IC=0
Collector-Emitter Saturation Current ICES 400 A VCE=100V, VEB=0
DC Current Gain HFE(1) 30 VCE=4V, IC=0.3A
DC Current Gain HFE(2) 15 80 VCE=4V, IC=3A
Collector-Emitter Saturation Voltage VCE(sat) 1.5 V IC=6A, IB=600mA
Base-Emitter On Voltage VBE(on) 2.0 V VCE=4V, IC=6A
Collector-Emitter Breakdown Voltage BVCEO 100 V IC=30mA, IB=0
Characteristic Frequency fT 3.0 MHz VCE=10V, IC=500mA, f=1MHz
Pinout (TO-220)
Pin 1 Base (B)
Pin 2 Collector (C)
Pin 3 Emitter (E)

Notes:

  • Exceeding the maximum ratings of the device may cause damage, potentially leading to permanent failure and affecting machine dependability. Please adhere to the absolute maximum ratings during circuit design.
  • When installing a heat sink, pay attention to torsional moment and the smoothness of the heat sink.
  • MOSFETs are sensitive to static electricity; ensure protection against static discharge during use.

Contact Information:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777


2411120955_Minos-TIP41C_C5121610.pdf

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