Compact SOT363 transistor pair Nexperia BC846BS 115 with low collector capacitance and matched gain
Key Attributes
Model Number:
BC846BS,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC846BS,115
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The Nexperia BC846BS is a general-purpose NPN/NPN transistor pair housed in a compact SOT363 (SC-88) SMD plastic package. Designed for efficiency and space-saving, it offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. This configuration minimizes component count and board space while preventing mutual interference between transistors, making it ideal for general-purpose switching and amplification applications.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 65 | V |
| IC | Collector current | - | - | - | 100 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 200 | 300 | 450 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 80 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| ICM | Peak collector current | - | - | - | 200 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | [1] | - | - | 625 | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | - | - | - | 230 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | Per device [1] | - | - | 416 | K/W |
| Characteristics | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 80 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 65 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | IC = 0 A; IE = 100 A; Tamb = 25 C | 6 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 15 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 6 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 10 A; Tamb = 25 C | - | 280 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 200 | 300 | 450 | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | 55 | 100 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 5 mA; Tamb = 25 C | - | 200 | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | 755 | 850 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 100 mA; IB = 5 mA; Tamb = 25 C | - | 1000 | - | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 580 | 650 | 700 | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 10 mA; Tamb = 25 C | - | - | 770 | mV |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 1.9 | - | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | 11 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; 10 Hz f 15700 Hz; Tamb = 25 C | - | 1.9 | - | dB |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz; Tamb = 25 C | - | 3.1 | - | dB |
| Package Outline | ||||||
| Package | TSSOP6 (SOT363) | Body dimensions | 2.1 x 1.25 x 0.95 mm | - | - | mm |
| Pitch | 0.65 mm | - | - | - | - | mm |
[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.
2410121943_Nexperia-BC846BS-115_C426779.pdf
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