Low RDS ON Minos MDT40N06D 60V N Channel Power MOSFET for Hard Switched and High Frequency Circuits
Key Attributes
Model Number:
MDT40N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
910pF@25V
Pd - Power Dissipation:
87W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
MDT40N06D
Package:
TO-252
Product Description
Product Overview
The MDT60N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-252 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
| General Features | ||||
| Drain-Source Voltage | VDS | - | 60 | V |
| RDS(ON) @ VGS=10V, ID=40A | RDS(ON) | Typ | 13 | m |
| RDS(ON) @ VGS=10V, ID=40A | RDS(ON) | Max | 16 | m |
| Drain Current-Continuous | ID | - | 40 | A |
| Drain Current-Pulsed | IDM | Note 1 | 200 | A |
| Maximum Power Dissipation | PD | Tc=25 | 87 | W |
| Single pulse avalanche energy | EAS | Note 2 | 120 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 To 175 | |
| Thermal Resistance, Junction-to-Case | RJC | - | 1.72 | /W |
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA |
| On Characteristics | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 (Typ 3) 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A, Note 3 | 13 (Typ) 16 (Max) | m |
| Forward Transconductance | gFS | VDS=25V,ID=25A | 25 | S |
| Dynamic Characteristics | ||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 910 | pF |
| Output Capacitance | Coss | - | 100 | pF |
| Reverse Transfer Capacitance | Crss | - | 30 | pF |
| Switching Characteristics | ||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V,RGEN=5, Note 4 | 26 | nS |
| Turn-on Rise Time | tr | - | 6 | nS |
| Turn-Off Delay Time | td(off) | - | 52 | nS |
| Turn-Off Fall Time | tf | - | 7 | nS |
| Total Gate Charge | Qg | VDS=30V,ID=50A, VGS=10V | 31 | nC |
| Gate-Source Charge | Qgs | - | 9 | nC |
| Gate-Drain Charge | Qgd | - | 5 | nC |
| Drain-Source Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | 1.2 | V |
2410122012_Minos-MDT40N06D_C19189961.pdf
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