N Channel Power MOSFET Minos MPT052N08P 85V with Improved Switching Performance and Low On Resistance
Key Attributes
Model Number:
MPT052N08P
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
4.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
637pF
Pd - Power Dissipation:
173.6W
Input Capacitance(Ciss):
4.021nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MPT052N08P
Package:
TO-220
Product Description
Product Overview
The MPT052N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy, making it ideal for demanding applications such as motor drivers and high-speed switching.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| General Features | ||||||
| Drain-Source Voltage | VDS | 85 | V | |||
| On-Resistance | Rds(on) | VGS=10V, ID=120A | 4.6 | 5.2 | m | |
| Absolute Ratings | ||||||
| Continuous Drain Current | ID | Silicon Limited | 138 | A | ||
| Continuous Drain Current | ID | Package Limited | 120 | A | ||
| Continuous Drain Current | ID | TC=100C, Silicon Limited | 87.4 | A | ||
| Pulsed Drain Current | IDM | Note1 | 480 | A | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Avalanche Energy | EAS | Note2 | 156 | mJ | ||
| Power Dissipation | PD | 173.6 | W | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 | 150 | |||
| Maximum Temperature for Soldering | TL | 260 | ||||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-Case | RJC | 0.72 | /W | |||
| Thermal resistance, Junction-Ambient | RJA | 62.5 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | VGS=0V, ID=250A | 85 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=85V, VGS=0V | 1 | A | ||
| Drain-Source Leakage Current | IDSS | VDS=68V, VGS=0V @TC=125C | 100 | A | ||
| Gate-Source Forward Leakage | IGSS(F) | VGS=+20V | 100 | nA | ||
| Gate-Source Reverse Leakage | IGSS(R) | VGS=-20V | -100 | nA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=50A | 4.6 | 5.2 | m | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V, VGS=0, f=1MHz | 4021 | pF | ||
| Output Capacitance | Coss | VDS=40V, VGS=0, f=1MHz | 637 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=40V, VGS=0, f=1MHz | 17 | pF | ||
| Total Gate Charge | Qg | VDD=40V, ID=50A, VGS=10V | 80 | nC | ||
| Gate-Source charge | Qgs | VDD=40V, ID=50A, VGS=10V | 23 | |||
| Gate-Drain charge | Qgd | VDD=40V, ID=50A, VGS=10V | 24 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load | 22 | ns | ||
| Rise Time | tr | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load | 42 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load | 48 | ns | ||
| Fall Time | tf | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load | 25 | ns | ||
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current | IS | 70 | A | |||
| Maximum Pulsed Current | ISM | 280 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=50A | 1.2 | V | ||
| Reverse Recovery Time | Trr | Is=20A, di/dt=100A/us | 60 | ns | ||
| Reverse Recovery Charge | Qrr | Is=20A, di/dt=100A/us | 136 | uC | ||
2506121200_Minos-MPT052N08P_C49108786.pdf
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