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quality NPN Transistor with Built In Bias Resistors and 100 Milliamp Output Current Nexperia PDTC114EU 115 factory
quality NPN Transistor with Built In Bias Resistors and 100 Milliamp Output Current Nexperia PDTC114EU 115 factory

NPN Transistor with Built In Bias Resistors and 100 Milliamp Output Current Nexperia PDTC114EU 115

Key Attributes
Model Number: PDTC114EU,115
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC114EU,115
Package:
SC-70
Product Description

Product Overview

The Nexperia PDTC114EU is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. Featuring built-in bias resistors (R1 = 10 k, R2 = 10 k), this component simplifies circuit design, reduces component count, and lowers pick-and-place costs. It offers an output current capability of 100 mA and is AEC-Q101 qualified, making it a cost-saving alternative for BC847/857 series in digital applications and suitable for switching loads and controlling IC inputs.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 Qualified
  • Package Type: SOT323 (SC-70)
  • Internal Resistors: R1 = 10 k, R2 = 10 k

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage - -10 - 40 V
Ptot Total power dissipation Tamb 25 C - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient in free air - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 2.5 1.8 - V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C - 230 - MHz

2410010303_Nexperia-PDTC114EU-115_C135830.pdf

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