Double Trench N channel Power MOSFET Minos MPT052N08S with Improved Switching and Avalanche Energy
Key Attributes
Model Number:
MPT052N08S
Product Custom Attributes
Mfr. Part #:
MPT052N08S
Package:
TO-263
Product Description
Product Overview
The MPT052N08S is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal component for synchronous rectification and high-speed switching applications.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Certifications: RoHS product
- Origin: Shenzhen, China (implied from contact information)
Technical Specifications
| Parameter | Value | Units | Conditions |
| General Characteristics | |||
| Drain-Source Voltage (VDS) | 85 | V | |
| Continuous Drain Current (ID) | 120 | A | Package Limited |
| Continuous Drain Current (ID) | 138 | A | Silicon Limited |
| Continuous Drain Current (ID) | 87.4 | A | @TC=100C, Silicon Limited |
| Pulsed Drain Current (IDM) | 480 | A | Note1 |
| Gate-Source Voltage (VGS) | ±20 | V | |
| Avalanche Energy (EAS) | 156 | mJ | Note2 |
| Power Dissipation (PD) | 173.6 | W | |
| Derating Factor | 1.39 | W/ | above 25°C |
| Operating Junction and Storage Temperature Range | -55 to 150 | ||
| Maximum Temperature for Soldering (TL) | 260 | ||
| Thermal Resistance (RJC) | 0.72 | /W | Junction-Case |
| Thermal Resistance (RJA) | 62.5 | /W | Junction-Ambient |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (VDSS) | 85 | V | VGS=0V, ID=250µA |
| Drain-Source Leakage Current (IDSS) | 1 | µA | VDS=85V, VGS=0V |
| Drain-Source Leakage Current (IDSS) | 100 | µA | VDS=68V, VGS=0V @TC=125°C |
| Gate-Source Forward Leakage (IGSS(F)) | 100 | nA | VGS=+20V |
| Gate-Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS=-20V |
| Drain-Source On-Resistance (RDS(on)) | 5.2 | mΩ | VGS=10V, ID=50A (Max) |
| Drain-Source On-Resistance (RDS(on)) | 4.6 | mΩ | VGS=10V, ID=50A (Typ) |
| Gate Threshold Voltage (VGS(th)) | 2 | V | VDS=VGS, ID=250µA (Min) |
| Gate Threshold Voltage (VGS(th)) | 4 | V | VDS=VGS, ID=250µA (Max) |
| Gate Threshold Voltage (VGS(th)) | 3 | V | VDS=VGS, ID=250µA (Typ) |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | 4021 | pF | VDS=40V, VGS=0V, f=1MHz |
| Output Capacitance (Coss) | 637 | pF | VDS=40V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance (Crss) | 17 | pF | VDS=40V, VGS=0V, f=1MHz |
| Total Gate Charge (Qg) | 80 | nC | VDD=40V,ID=50A, VGS=10V |
| Gate-Source Charge (Qgs) | 23 | nC | VDD=40V,ID=50A, VGS=10V |
| Gate-Drain Charge (Qgd) | 24 | nC | VDD=40V,ID=50A, VGS=10V |
| Switching Characteristics | |||
| Turn-On Delay Time (td(on)) | 22 | ns | VDD=40V,ID=50A, VGS=10V, RG=3Ω, Resistive Load |
| Rise Time (tr) | 42 | ns | VDD=40V,ID=50A, VGS=10V, RG=3Ω, Resistive Load |
| Turn-Off Delay Time (td(off)) | 48 | ns | VDD=40V,ID=50A, VGS=10V, RG=3Ω, Resistive Load |
| Fall Time (tf) | 25 | ns | VDD=40V,ID=50A, VGS=10V, RG=3Ω, Resistive Load |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (IS) | 120 | A | |
| Maximum Pulsed Current (ISM) | 280 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | VGS=0V, IS=50A |
| Reverse Recovery Time (Trr) | 60 | ns | Is=20A,VGS=0, di/dt=100A/us |
| Reverse Recovery Charge (Qrr) | 136 | nC | Is=20A,VGS=0, di/dt=100A/us |
| Ordering Information | |||
| Ordering Code | Package | Product Code | Packing |
| MPT052N08P | TO-220 | MPT052N08P | Tube |
| MPT052N08S | TO-263 | MPT052N08S | Reel |
2511181950_Minos-MPT052N08S_C52941370.pdf
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