80V N Channel Power MOSFET Minos MP150N08 Featuring Low Gate Charge and High Avalanche Energy for Power Supplies
Key Attributes
Model Number:
MP150N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
150A
RDS(on):
5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
395pF
Number:
1 N-channel
Output Capacitance(Coss):
570pF
Input Capacitance(Ciss):
4.115nF
Pd - Power Dissipation:
259W
Gate Charge(Qg):
69nC
Mfr. Part #:
MP150N08
Package:
TO-220
Product Description
Product Overview
The MP150N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS. The TO-220 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 150 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 823 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 259 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 823 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ||||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.7 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | 1 | μA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | ±100 | nA | |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=80A | - | 4 | 5 | mΩ |
| Forward Transconductance | gFS | VDS=50V,ID=75A | - | 180 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 4115 | - | pF |
| Output Capacitance | Coss | - | 570 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 395 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | - | 28 | - | nS |
| Turn-on Rise Time | tr | - | 20 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 50 | - | nS | |
| Turn-Off Fall Time | tf | 23 | - | - | nS | |
| Total Gate Charge | Qg | VDS=40V,ID=40A, VGS=10V | - | 69 | - | nC |
| Gate-Source Charge | Qgs | - | 23 | - | nC | |
| Gate-Drain Charge | Qg | - | 22 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=155A | - | - | 1.2 | V |
2410122012_Minos-MP150N08_C2980281.pdf
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