PNP epitaxial power transistor Minos MJL21193 designed for 100 watt audio amplifier output stage applications
Product Overview
The Minos Silicon MJL21193 is a PNP epitaxial power transistor designed for high-fidelity audio frequency amplifier output stages. It offers a high collector voltage of -250V (min) and is complementary to the MJL21194. This device is recommended for 100-W audio amplifier applications. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly decrease product reliability, even if operating conditions remain within absolute maximum ratings.
Product Attributes
- Brand: Minos Silicon
- Type: PNP Epitaxial Power Transistor
- Complementary to: MJL21194
- Package: TO-264
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-base voltage | VCBO | -400 | V | ||||
| Collector-emitter voltage | VCEO | -250 | V | ||||
| Emitter-base voltage | VEBO | -5 | V | ||||
| Collector current | IC | -16 | A | ||||
| Base current | IB | -5 | A | ||||
| Collector power dissipation (Tc=25) | PC | 200 | W | ||||
| Junction temperature | Tj | 150 | |||||
| Storage temperature range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector cut-off current | ICBO | uA | VCB=-250V; IE=0 | -10.0 | |||
| Emitter cut-off current | IEBO | uA | VEB=-5V; Ic=0 | -10.0 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | -250 | V | IC=-50mA;IB=0 | |||
| DC current gain | hFE | VCE=-5V; IC=-8A; | 20 | 80 | |||
| DC current gain | hFE(2) | VCE=-5V; IC=-16A; | 8 | ||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-8A; IB=-0.8A | -1.4 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-16A; IB=-3.2A | -4 | |||
| Base-emitter voltage | VBE | V | VCE=-5V;IC=-8A | -2.2 | |||
| Transition frequency | fT | MHz | VCE=-10V; IC=-1A | 4 | |||
| Junction-to-Case Thermal Resistance | RJC | /W | 0.63 | ||||
Note: Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Please do not exceed absolute maximum ratings during circuit design. When installing a heat sink, pay attention to torsional moment and smoothness. MOSFETs are sensitive to static electricity; protect them from damage during use.
2411120955_Minos-MJL21193_C5377666.pdf
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