High voltage silicon MOSFET Minos MD20N60 optimized for SMPS and fast switching electronic devices
Key Attributes
Model Number:
MD20N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
390mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
3.12nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
MD20N60
Package:
TO-3P-3
Product Description
Product Description
The MD20N60 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for SMPS, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (implied by www.mns-kx.com)
- Origin: Shenzhen, China (implied by contact information)
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | TO-3PN/TO-247 | TO-220 | TO-220F |
| VDS@Tj.max | 600 | V | ✔ | ✔ | ✔ |
| ID | 20 | A | ✔ | ✔ | ✔ |
| RDS(ON).Typ | 0.39 | Ω | ✔ | ✔ | ✔ |
| RJC | 0.42 | ℃/W | ✔ | ||
| RJA | 40 | ℃/W | ✔ | ||
| RJC | 0.54 | ℃/W | ✔ | ||
| RJA | 62.5 | ℃/W | ✔ | ✔ | |
| RJC | 2.6 | ℃/W | ✔ | ||
| VDSS | 600 | V | ✔ | ✔ | ✔ |
| ID Continuous | 20 | A | ✔ | ✔ | ✔ |
| ID Continuous @ Tc = 100C | 12.6 | A | ✔ | ✔ | ✔ |
| IDM Pulsed | 80 | A | ✔ | ✔ | ✔ |
| VGS | ±30 | V | ✔ | ✔ | ✔ |
| EAS Single Pulse Avalanche Energy | 1200 | mJ | ✔ | ✔ | ✔ |
| dv/dt Peak Diode Recovery | 5.0 | V/ns | ✔ | ✔ | ✔ |
| PD Power Dissipation TO-247, TO-3PN | 300 | W | ✔ | ||
| Derating Factor above 25C | 2.38 | W/C | ✔ | ||
| PD Power Dissipation TO-220 | 230 | W | ✔ | ||
| Derating Factor above 25C | 1.85 | W/C | ✔ | ||
| PD Power Dissipation TO-220F | 48 | W | ✔ | ||
| Derating Factor above 25C | 0.38 | W/C | ✔ | ||
| TJ, Tstg Operating and Storage Temperature Range | -55 to 150 | C | ✔ | ✔ | ✔ |
| TL Maximum Temperature for Soldering | 300 | C | ✔ | ✔ | ✔ |
| Drain to Source Breakdown Voltage | 650 | V | ✔ | ✔ | ✔ |
| Drain to Source Leakage Current | 10 | A | ✔ | ✔ | ✔ |
| Gate to Source Forward Leakage | 100 | nA | ✔ | ✔ | ✔ |
| Gate to Source Reverse Leakage | 100 | nA | ✔ | ✔ | ✔ |
| Drain-to-Source On-Resistance | 0.39 | Ω | ✔ | ✔ | ✔ |
| Gate Threshold Voltage | 2.0 - 4.0 | V | ✔ | ✔ | ✔ |
| Forward Transconductance | 12 | S | ✔ | ✔ | ✔ |
| Gate resistance | 1.5 | Ω | ✔ | ✔ | ✔ |
| Input Capacitance (Ciss) | 3120 | pF | ✔ | ✔ | ✔ |
| Output Capacitance (Coss) | 250 | pF | ✔ | ✔ | ✔ |
| Reverse Transfer Capacitance (Crss) | 15 | pF | ✔ | ✔ | ✔ |
| Turn-on Delay Time (td(ON)) | 53 | ns | ✔ | ✔ | ✔ |
| Rise Time (tr) | 85 | ns | ✔ | ✔ | ✔ |
| Turn-Off Delay Time (td(OFF)) | 99 | ns | ✔ | ✔ | ✔ |
| Fall Time (Tf) | 93 | ns | ✔ | ✔ | ✔ |
| Total Gate Charge (Qg) | 62 | nC | ✔ | ✔ | ✔ |
| Gate to Source Charge (Qgs) | 15 | nC | ✔ | ✔ | ✔ |
| Gate to Drain (Miller)Charge (Qgd) | 24.5 | nC | ✔ | ✔ | ✔ |
| Continuous Source Current (Body Diode) | 20 | A | ✔ | ✔ | ✔ |
| Maximum Pulsed Current (Body Diode) | 80 | A | ✔ | ✔ | ✔ |
| Diode Forward Voltage (VSD) | 1.2 | V | ✔ | ✔ | ✔ |
| Reverse Recovery Time (Trr) | 556 | ns | ✔ | ✔ | ✔ |
| Reverse Recovery Charge (Qrr) | 6143 | nC | ✔ | ✔ | ✔ |
| Reverse Recovery Current (Irrm) | 22.1 | A | ✔ | ✔ | ✔ |
2504101957_Minos-MD20N60_C2980284.pdf
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