High voltage silicon MOSFET Minos MD20N60 optimized for SMPS and fast switching electronic devices
Key Attributes
Model Number:
MD20N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
390mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
3.12nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
MD20N60
Package:
TO-3P-3
Product Description
Product Description
The MD20N60 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for SMPS, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (implied by www.mns-kx.com)
- Origin: Shenzhen, China (implied by contact information)
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | TO-3PN/TO-247 | TO-220 | TO-220F |
| VDS@Tj.max | 600 | V | ✔ | ✔ | ✔ |
| ID | 20 | A | ✔ | ✔ | ✔ |
| RDS(ON).Typ | 0.39 | Ω | ✔ | ✔ | ✔ |
| RJC | 0.42 | ℃/W | ✔ | ||
| RJA | 40 | ℃/W | ✔ | ||
| RJC | 0.54 | ℃/W | ✔ | ||
| RJA | 62.5 | ℃/W | ✔ | ✔ | |
| RJC | 2.6 | ℃/W | ✔ | ||
| VDSS | 600 | V | ✔ | ✔ | ✔ |
| ID Continuous | 20 | A | ✔ | ✔ | ✔ |
| ID Continuous @ Tc = 100C | 12.6 | A | ✔ | ✔ | ✔ |
| IDM Pulsed | 80 | A | ✔ | ✔ | ✔ |
| VGS | ±30 | V | ✔ | ✔ | ✔ |
| EAS Single Pulse Avalanche Energy | 1200 | mJ | ✔ | ✔ | ✔ |
| dv/dt Peak Diode Recovery | 5.0 | V/ns | ✔ | ✔ | ✔ |
| PD Power Dissipation TO-247, TO-3PN | 300 | W | ✔ | ||
| Derating Factor above 25C | 2.38 | W/C | ✔ | ||
| PD Power Dissipation TO-220 | 230 | W | ✔ | ||
| Derating Factor above 25C | 1.85 | W/C | ✔ | ||
| PD Power Dissipation TO-220F | 48 | W | ✔ | ||
| Derating Factor above 25C | 0.38 | W/C | ✔ | ||
| TJ, Tstg Operating and Storage Temperature Range | -55 to 150 | C | ✔ | ✔ | ✔ |
| TL Maximum Temperature for Soldering | 300 | C | ✔ | ✔ | ✔ |
| Drain to Source Breakdown Voltage | 650 | V | ✔ | ✔ | ✔ |
| Drain to Source Leakage Current | 10 | A | ✔ | ✔ | ✔ |
| Gate to Source Forward Leakage | 100 | nA | ✔ | ✔ | ✔ |
| Gate to Source Reverse Leakage | 100 | nA | ✔ | ✔ | ✔ |
| Drain-to-Source On-Resistance | 0.39 | Ω | ✔ | ✔ | ✔ |
| Gate Threshold Voltage | 2.0 - 4.0 | V | ✔ | ✔ | ✔ |
| Forward Transconductance | 12 | S | ✔ | ✔ | ✔ |
| Gate resistance | 1.5 | Ω | ✔ | ✔ | ✔ |
| Input Capacitance (Ciss) | 3120 | pF | ✔ | ✔ | ✔ |
| Output Capacitance (Coss) | 250 | pF | ✔ | ✔ | ✔ |
| Reverse Transfer Capacitance (Crss) | 15 | pF | ✔ | ✔ | ✔ |
| Turn-on Delay Time (td(ON)) | 53 | ns | ✔ | ✔ | ✔ |
| Rise Time (tr) | 85 | ns | ✔ | ✔ | ✔ |
| Turn-Off Delay Time (td(OFF)) | 99 | ns | ✔ | ✔ | ✔ |
| Fall Time (Tf) | 93 | ns | ✔ | ✔ | ✔ |
| Total Gate Charge (Qg) | 62 | nC | ✔ | ✔ | ✔ |
| Gate to Source Charge (Qgs) | 15 | nC | ✔ | ✔ | ✔ |
| Gate to Drain (Miller)Charge (Qgd) | 24.5 | nC | ✔ | ✔ | ✔ |
| Continuous Source Current (Body Diode) | 20 | A | ✔ | ✔ | ✔ |
| Maximum Pulsed Current (Body Diode) | 80 | A | ✔ | ✔ | ✔ |
| Diode Forward Voltage (VSD) | 1.2 | V | ✔ | ✔ | ✔ |
| Reverse Recovery Time (Trr) | 556 | ns | ✔ | ✔ | ✔ |
| Reverse Recovery Charge (Qrr) | 6143 | nC | ✔ | ✔ | ✔ |
| Reverse Recovery Current (Irrm) | 22.1 | A | ✔ | ✔ | ✔ |
2504101957_Minos-MD20N60_C2980284.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
