86--136 6733 2386
quality Power Management MOSFET MIRACLE POWER MU3014D Featuring Low RDS ON and 100 Percent EAS Guarantee factory
quality Power Management MOSFET MIRACLE POWER MU3014D Featuring Low RDS ON and 100 Percent EAS Guarantee factory

Power Management MOSFET MIRACLE POWER MU3014D Featuring Low RDS ON and 100 Percent EAS Guarantee

Key Attributes
Model Number: MU3014D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
472pF
Pd - Power Dissipation:
60W
Output Capacitance(Coss):
574pF
Input Capacitance(Ciss):
5.065nF
Gate Charge(Qg):
97nC@10V
Mfr. Part #:
MU3014D
Package:
TO-252
Product Description

Product Overview

The MU3014D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for high-performance applications, including load switching, PWM applications, and power management. It is 100% EAS guaranteed and boasts a 30V drain-source voltage and 180A continuous drain current.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel Enhancement Mode
  • EAS Guaranteed: 100%

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous (TC = 25°C) 180 A
ID Drain Current-Continuous (TC = 100°C) 114 A
IDM Drain Current-Pulsed 720 A
PD Maximum Power Dissipation (TC = 25°C) 60 W
EAS Single Pulsed Avalanche Energy 289 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 2.1 °C/W
RθJA Thermal Resistance, Junction to Ambient 35 °C/W
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 µA
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 1.0 1.8 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 2.0 2.6 mΩ
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 3.3 4.3 mΩ
Dynamic Characteristic
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 5065 - pF
Coss Output Capacitance - 574 - pF
Crss Reverse Transfer Capacitance - 472 - pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3Ω - 16 - ns
tr Turn-On Rise Time - 30 - ns
td(off) Turn-Off Delay Time - 54 - ns
tf Turn-Off Fall Time - 19 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 30A - 97 - nC
Qgs Gate-Source Charge - 20 - nC
Qgd Gate-Drain Charge - 23 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 180 A
ISM Maximum Pulsed Current - - 720 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 30A, di/dt = 100A/µs - 23 - ns
Qrr Body Diode Reverse Recovery Charge IF = 30A, di/dt = 100A/µs - 14 - nC

2504151445_MIRACLE-POWER-MU3014D_C47361167.pdf

Related Products
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads factory
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.