Silicon N Channel Power MOSFET Minos MD70N10 Suitable for Switch Mode Power Supplies and PFC Circuits
Key Attributes
Model Number:
MD70N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
17mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
260pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.7nF@25V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MD70N10
Package:
TO-3PN
Product Description
Product Overview
The MD70N10 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications due to its fast switching, 100% avalanche testing, and improved dv/dt capability. Key applications include Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.
Product Attributes
- Brand: MINOS
- Origin: Shenzhen, China
- Material: Silicon N-Channel
- Package: TO-3PH
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | V |
| Continuous Drain Current | ID | TC = 25 C | 70 | A |
| Pulsed Drain Current | IDM | Figure 6 | A | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy | EAS | IAS= 30A, VDD= 50V, RG = 25 , Starting TJ= 25C | 1943 | mJ |
| Avalanche Current | IAR | 32 | A | |
| Repetitive Avalanche Energy | EAR | 36 | mJ | |
| Power Dissipation | PD | TC = 25C | 200 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to175 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | TO-3P | 0.75 | /W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-3P | 62 | /W |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ = 25C | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 125C | 100 | A |
| Gate-Source Leakage | IGSS | VGS = +20V,VDS=0V | 100 | nA |
| Gate-Source Leakage | IGSS | VGS=-20V, VDS=0V | -100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID= 250A | 2.0 - 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 28A | 17 - 21 | m |
| Forward Transconductance | gfs | VDS = 10V, ID = 28A | 85 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 2700 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 610 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 260 | pF |
| Total Gate Charge | Qg | VDD =50V, ID = 28A, VGS = 0 to 10V | 60 | nC |
| Gate-Source Charge | Qgs | VDD =50V, ID = 28A, VGS = 0 to 10V | 15 | nC |
| Gate-Drain Charge | Qg | VDD =50V, ID = 28A, VGS = 0 to 10V | 45 | nC |
| Turn-on Delay Time | td(on) | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 20 | ns |
| Turn-on Rise Time | tr | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 28 | ns |
| Turn-off Delay Time | td(off) | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 65 | ns |
| Turn-off Fall Time | tf | VDD = 50V, ID =28A, VGS= 10V, RG = 2.5 | 15 | ns |
| Continuous Body Diode Current | IS | TC = 25 C | 70 | A |
| Pulsed Diode Forward Current | ISM | 230 | A | |
| Body Diode Voltage | VSD | TJ = 25C, ISD = 28A, VGS = 0V | 1.5 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 28A, diF/dt =100A /s | 195 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IS = 28A, diF/dt =100A /s | 107 | C |
2410121936_Minos-MD70N10_C5352772.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
