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quality Power Management MOSFET MIRACLE POWER MU3013Y Featuring Electrical Avalanche Stress Tested Technology factory
quality Power Management MOSFET MIRACLE POWER MU3013Y Featuring Electrical Avalanche Stress Tested Technology factory

Power Management MOSFET MIRACLE POWER MU3013Y Featuring Electrical Avalanche Stress Tested Technology

Key Attributes
Model Number: MU3013Y
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
3.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
366pF
Pd - Power Dissipation:
236W
Input Capacitance(Ciss):
3.65nF
Output Capacitance(Coss):
494pF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
MU3013Y
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The MU3013Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Featuring advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management. This MOSFET is guaranteed 100% EAS (Electrical Avalanche Stress) tested, ensuring reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 30 V
VGS Gate-Source Voltage Tc = 25C unless otherwise noted - - ±20 V
ID Drain Current-Continuous TC = 25C - - 90 A
ID Drain Current-Continuous TC = 100C - - 57 A
IDM Drain Current-Pulsed b - - 360 A
PD Maximum Power Dissipation - - 236 W
EAS Single Pulsed Avalanche Energy c - - 225 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 0.53 - C/W
RJA Thermal Resistance, Junction to Ambient - 34 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 µA
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 1.0 1.6 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A d - 2.4 3.1 mΩ
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A d - 3.6 4.6 mΩ
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 3650 - pF
Coss Output Capacitance - 494 - pF
Crss Reverse Transfer Capacitance - 366 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3Ω - 10 - ns
tr Turn-On Rise Time - 19 - ns
td(off) Turn-Off Delay Time - 50 - ns
tf Turn-Off Fall Time - 20 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 30A - 67 - nC
Qgs Gate-Source Charge - 11 - nC
Qgd Gate-Drain Charge - 19 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 90 A
ISM Maximum Pulsed Current - - 360 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, di/dt = 100A/µs - 18 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, di/dt = 100A/µs - 6 - nC

Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 25V, IAS = 30A, RG = 25 Starting TJ = 25 .
d. Pulse width ≤300µs; duty cycle ≤2%.

Package Information: PDFN5*6


2504151445_MIRACLE-POWER-MU3013Y_C47361166.pdf

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