N Channel Power MOSFET Minos IRFB3306 featuring high density cell design and low RDS ON for switching circuits
Key Attributes
Model Number:
IRFB3306
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
680pF
Number:
1 N-channel
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
8.2nF
Pd - Power Dissipation:
210W
Gate Charge(Qg):
186nC@10V
Mfr. Part #:
IRFB3306
Package:
TO-220
Product Description
Product Overview
The IRFB3306 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS-KX (implied by www.mns-kx.com)
- Origin: Shenzhen, China (implied by contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 150 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 600 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 210 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 1000 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance, Junction-to-Case | RJC | 0.7 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=50A | - | 3.5 | 4.2 | mΩ |
| Forward Transconductance | gFS | VDS=50V,ID=75A | - | 180 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 8200 | - | pF |
| Output Capacitance | Coss | - | 760 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 680 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=40A, VGS=10V,RGEN=3Ω | - | 27 | - | nS |
| Turn-on Rise Time | tr | - | 25 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 90 | - | nS | |
| Turn-Off Fall Time | tf | 40 | - | - | nS | |
| Total Gate Charge | Qg | VDS=60V,ID=40A, VGS=10V | - | 186 | - | nC |
| Gate-Source Charge | Qgs | - | 46 | - | nC | |
| Gate-Drain Charge | Qg | - | 70 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=150A | - | - | 1.2 | V |
2410122012_Minos-IRFB3306_C20624236.pdf
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