Load Switch MOSFET MIRACLE POWER MU6888B with 68 Volt Drain Source Voltage and RoHS Compliant Design
Key Attributes
Model Number:
MU6888B
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
88A
RDS(on):
11mΩ@6V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Input Capacitance(Ciss):
3.601nF
Pd - Power Dissipation:
109W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
MU6888B
Package:
TO-252
Product Description
Product Overview
The MU6888B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology for superior performance. It features a 68V drain-source voltage, 88A continuous drain current, and a low typical on-resistance of 6.0m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as Load Switches, PWM applications, and Power Management, providing efficient power handling and reliable operation. The device is Halogen-free and RoHS-compliant.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel Enhancement Mode
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 68 | V | |||
| VGS (Gate-Source Voltage) | 20 | V | |||
| ID (Drain Current-Continuous) | TC = 25C | 88 | A | ||
| ID (Drain Current-Continuous) | TC = 100C | 54 | A | ||
| IDM (Drain Current-Pulsed) | 320 | A | |||
| PD (Power Dissipation) | TC = 25C | 109 | W | ||
| EAS (Single Pulsed Avalanche Energy) | 342 | mJ | |||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| RJC (Thermal Resistance, Junction to Case) | 1.15 | C/W | |||
| RJA (Thermal Resistance, Junction to Ambient) | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 68 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 68V, VGS = 0V | - | - | 1.0 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | |||||
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) (Static Drain-Source On- Resistance) | VGS = 10V, ID = 40A | - | 6.0 | 7.8 | m |
| RDS(on) (Static Drain-Source On- Resistance) | VGS = 6.0V, ID = 30A | - | 8.5 | 11 | m |
| Dynamic Characteristics | |||||
| RG (Gate Resistance) | VDS = VGS = 0V, f = 1.0MHz | - | 2.0 | - | |
| Ciss (Input Capacitance) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 3601 | - | pF |
| Coss (Output Capacitance) | - | 318 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 299 | - | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 35V, VGS = 10V, ID = 40A, RGEN = 4.7 | - | 20 | - | ns |
| tr (Turn-On Rise Time) | - | 51 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 50 | - | ns | |
| tf (Turn-Off Fall Time) | - | 22 | - | ns | |
| Qg (Total Gate Charge) | VDS = 35V, VGS = 0 to 10V, ID = 40A | - | 75 | - | nC |
| Qgs (Gate-Source Charge) | - | 26 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 20 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| IS (Drain-Source Diode Forward Continuous Current) | VG = VD = 0V, Force Current | - | - | 88 | A |
| ISM (Maximum Pulsed Current) | - | - | 320 | A | |
| VSD (Drain-Source Diode Forward Voltage) | VGS = 0V, IS = 30A | - | - | 1.1 | V |
| Trr (Body Diode Reverse Recovery Time) | IF = 20A, dIF/dt = 100A/s | - | 23 | - | ns |
| Qrr (Body Diode Reverse Recovery Charge) | IF = 20A, dIF/dt = 100A/s | - | 16 | - | nC |
2504151445_MIRACLE-POWER-MU6888B_C47361193.pdf
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