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quality Load Switch MOSFET MIRACLE POWER MU4006D with 80A Continuous Drain Current and 40V Maximum Drain Source Voltage factory
quality Load Switch MOSFET MIRACLE POWER MU4006D with 80A Continuous Drain Current and 40V Maximum Drain Source Voltage factory

Load Switch MOSFET MIRACLE POWER MU4006D with 80A Continuous Drain Current and 40V Maximum Drain Source Voltage

Key Attributes
Model Number: MU4006D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
224pF
Pd - Power Dissipation:
142W
Input Capacitance(Ciss):
3.778nF
Output Capacitance(Coss):
267pF
Gate Charge(Qg):
73nC
Mfr. Part #:
MU4006D
Package:
TO-252
Product Description

Product Overview

The MU4006D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring 40V drain-source voltage and 80A continuous drain current. It offers excellent RDS(on) of 4.5m (Typ.) at VGS = 10V and low gate charge, thanks to its advanced trench technology. This MOSFET is 100% EAS guaranteed and is suitable for applications such as load switches, PWM applications, and power management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 80 A
ID Drain Current-Continuous TC = 100C 50 A
IDM Drain Current-Pulsed 320 A
PD Maximum Power Dissipation TC = 25C 142 W
EAS Single Pulsed Avalanche Energy 175 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.88 C/W
RJA Thermal Resistance, Junction to Ambient 31 C/W
Electrical Characteristics
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 40V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 - 2.5 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 30A - 4.5 5.8 m
RDS(on) Static Drain-Source On- Resistance VGS = 4.5V, ID = 20A - 6.1 8.2 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - TBD -
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz - 3778 - pF
Coss Output Capacitance - 267 - pF
Crss Reverse Transfer Capacitance - 224 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 - 12 - ns
tr Turn-On Rise Time - 29 - ns
td(off) Turn-Off Delay Time - 60 - ns
tf Turn-Off Fall Time - 16 - ns
Qg Total Gate Charge VDD = 20V, VGS = 0 to 10V, ID = 30A - 73 - nC
Qgs Gate-Source Charge - 15 - nC
Qgd Gate-Drain Charge - 16 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 80 A
ISM Maximum Pulsed Current - - 320 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 16 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 10 - nC

2504151445_MIRACLE-POWER-MU4006D_C47361185.pdf

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